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APT6030BVFRG

Description
Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
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APT6030BVFRG Overview

Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

APT6030BVFRG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeTO-247AD
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)84 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
APT6030BVFR
APT6030SVFR
600V 21A
0.300
POWER MOS V
®
FREDFET
BVFR
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
D
3
PAK
TO-247
SVFR
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
FAST RECOVERY BODY DIODE
G
S
D
TO-247 or Surface Mount D
3
PAK Package
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT6030BVFR_SVFR
UNIT
Volts
Amps
600
21
84
±30
±40
298
2.38
-55 to 150
300
21
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
600
0.300
250
1000
±100
2
4
(V
GS
= 10V, I
D
= 10.5A)
Ohms
µA
nA
Volts
1-2005
050-5944 Rev A
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT6030BVFRG Related Products

APT6030BVFRG APT6030SVFRG
Description Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Microsemi Microsemi
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compliant unknown
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 1300 mJ 1300 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 21 A 21 A
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e1 e3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 245
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 84 A 84 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface TIN SILVER COPPER PURE MATTE TIN
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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