AP99LT06GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
60V
3.5mΩ
120A
Description
AP99LT06 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3,4
4
Rating
60
+20
120
90
480
39
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.2
65
Units
℃/W
℃/W
1
201308151
Data and specifications subject to change without notice
AP99LT06GI-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=40A
V
DS
=48V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=30V
V
GS
=10V
V
DS
=30V
I
D
=40A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=30V
f=1.0MHz
f=1.0MHz
Min.
60
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
90
-
-
145
60
7
30
75
80
13
770
40
2
Max. Units
-
3.5
5
-
25
+100
232
-
-
-
-
-
-
-
-
4
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
14400 23040
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
50
75
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
4.Ensure that the channel temperature does not exceed 150
o
C
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP99LT06GI-HF
300
200
T
C
=25 C
250
o
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
V
G
= 6.0V
T
C
=150
o
C
160
10V
9.0V
8.0V
7.0V
V
G
=6.0V
120
150
80
100
40
50
0
0
2
4
6
8
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.0
I
D
= 1mA
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
1.6
1.1
Normalized BV
DSS
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
2.0
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=250uA
1.6
30
Normalized V
GS(th)
I
S
(A)
1.2
T
j
=150
o
C
20
T
j
=25
o
C
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP99LT06GI-HF
f=1.0MHz
12
20000
10
I
D
=40A
V
DS
=30V
16000
V
GS
, Gate to Source Voltage (V)
8
C
iss
C (pF)
12000
6
8000
4
4000
2
0
0
40
80
120
160
200
0
1
5
9
13
17
21
25
C
oss
C
rss
29
33
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
Operation in this
area limited by
R
DS(ON)
100
Normalized Thermal Response (R
thjc
)
0.2
100us
I
D
(A)
1ms
10
0.1
0.1
0.05
0.02
0.01
10ms
1
P
DM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
100ms
T
C
=25
o
C
Single Pulse
1s
DC
1
10
100
0
0.1
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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