EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS31-13

Description
Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BAS31-13 Overview

Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3

BAS31-13 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

BAS31-13 Preview

BAS31
DUAL SURFACE MOUNT SWITCHING DIODE
Features
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
SOT-23
Dim
A
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
A
B
C
B
C
D
E
G
H
J
M
L
Mechanical Data
·
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: K21
Weight: 0.008 grams (approx.)
E
TOP VIEW
D
G
H
K
J
K
L
M
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
BAS31
100
75
53
500
250
4.0
2.0
350
357
-65 to +150
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
FM
Min
0.62
¾
¾
¾
¾
¾
¾
Max
0.72
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
Test Condition
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
V
mA
mA
mA
nA
pF
ns
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Notes:
I
RM
C
j
t
rr
1. Valid provided that terminals are kept at ambient temperature.
DS11016 Rev. C-2
1 of 2
BAS31
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
I
R
, LEAKAGE CURRENT (nA)
100
1000
10
100
1.0
10
0.1
V
R
= 20V
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
1
0
100
200
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
DS11016 Rev. C-2
2 of 2
BAS31

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 684  1706  1278  2785  2468  14  35  26  57  50 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号