Ordering number : EN6136B
5HN01M
SANYO Semiconductors
DATA SHEET
5HN01M
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
50
±20
0.1
0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7023A-010
2.0
3
0.15
Product & Package Information
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
5HN01M-TL-E
5HN01M-TL-H
0.425
Packing Type: TL
Marking
LOT No.
1.25
2.1
0 to 0.08
0.2
0.425
1
0.65
2
0.3
YC
TL
LOT No.
Electrical Connection
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
1
3
0.9
0.3
2
http://semicon.sanyo.com/en/network
71112 TKIM/31506PE MSIM TB-00002110/90100 TSIM TA-2044 No.6136-1/7
5HN01M
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=100mA, VGS=0V
VDS=10V, VGS=10V, ID=100mA
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA
ID=50mA, VGS=10V
ID=30mA, VGS=4V
1
85
120
5.8
7.5
6.2
4.4
1.5
10
See specified Test Circuit.
11
105
75
1.40
0.21
0.34
0.85
1.2
7.5
10.5
Ratings
min
50
1
±10
2.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
10V
0V
VIN
VIN
VDD=25V
ID=50mA
RL=500Ω
VOUT
PW=10μs
D.C.≤1%
D
G
5HN01M
P.G
50Ω
S
Ordering Information
Device
5HN01M-TL-E
5HN01M-TL-H
Package
MCP
MCP
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
No.6136-2/7
5HN01M
0.10
ID -- VDS
8.0
V
0.20
0.18
ID -- VGS
VDS=10V
Ta=
--25
°
C
75
°
C
25
°
C
0
1
2
3
4
6.
0V
0.08
4.
10
.0V
0V
3.0
V
Drain Current, ID -- A
1.0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
Drain Current, ID -- A
0.06
0.04
2.5V
0.02
VGS=2.0V
0
0
0.2
0.4
0.6
0.8
0.02
0
5
IT00043
Drain-to-Source Voltage, VDS -- V
12
IT00042
100
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
11
10
9
7
VGS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
50mA
8
10
7
5
3
2
ID=30mA
7
6
5
4
0
1
2
3
4
5
6
7
8
9
10
Ta=75
°
C
25
°
C
--25
°
C
1.0
0.01
2
3
5
7
0.1
2
3
IT00045
Gate-to-Source Voltage, VGS -- V
100
7
IT00044
14
RDS(on) -- ID
Drain Current, ID -- A
RDS(on) -- Ta
VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
12
10
8
10
7
5
3
2
Ta=75°C
25°C
--25°C
6
4V
S=
VG
10V
A,
0m
S=
3
G
A, V
I D=
0m
5
I D=
4
2
0
--60
1.0
0.01
2
3
5
7
0.1
2
3
--40
--20
0
20
40
60
80
100
120
140
160
Drain Current, ID -- A
1.0
|
y
fs
|
-- ID
IT00046
3
2
Ambient Temperature, Ta --
°
C
IT00047
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
VDS=10V
Source Current, IS -- A
3
2
0.1
7
5
-2
Ta= -
0.1
7
5
3
2
5
°
C
25°C
75
°
C
3
Ta= 7
5
°
C
0.01
0.01
2
3
5
7
0.1
2
3
0.01
0.4
0.5
0.6
0.7
--25
°
C
0.8
0.9
2
25
°
C
1.0
1.1
1.2
Drain Current, ID -- A
IT00048
Diode Forward Voltage, VSD -- V
IT00049
No.6136-3/7
5HN01M
1000
7
5
SW Time -- ID
VDD=25V
VGS=10V
td(off)
tf
tr
td(on)
Ciss, Coss, Crss -- pF
100
7
5
3
2
10
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
2
3
5
7
Ciss
Coss
Crss
1.0
7
5
3
2
0.1
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
10
9
0.1
IT00050
0.20
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT00051
PD -- Ta
8
7
6
5
4
3
2
1
0
0
0.3
0.6
0.9
1.2
1.5
IT00052
Allowable Power Dissipation, PD -- W
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=0.1A
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta --
°
C
IT02381
No.6136-4/7
5HN01M
Embossed Taping Specification
5HN01M-TL-E, 5HN01M-TL-H
No.6136-5/7
Embedded System
京公网安备 11010802033920号
EEWORLD
