V
CE
I
C
=
=
2500 V
2000 A
ABB StakPak H Series
Press-pack IGBT
5SNX 20H2500
preliminary
Doc. No. 5SYB 0116-03 June 04
•
High SOA
•
High tolerance to uneven
mounting pressure
•
Suitable for series connection
•
Explosion resistant package
•
Modular design concept,
available for a wide range of
current ratings
Maximum Rated Values
1)
Parameter
2)
Collector-emitter voltage
DC collector current
Repetitive peak collector
current
Gate-emitter voltage
Total power dissipation
DC forward current
Repetitive peak forward
current
Surge current
IGBT short circuit SOA
Junction temperature
Storage temperature
Mounting force
2)
1)
2)
Symbol
V
CES
I
C
I
CM
V
GES
P
tot
I
F
I
FM
I
FSM
t
psc
T
vj
T
stg
F
M
T
c
= 75 °C
Conditions
min
max
2500
2000
4000
±
20
Unit
V
A
A
V
W
A
A
kA
µs
°C
°C
kN
T
c
= 25 °C, (IGBT)
T
c
= 75 °C
18000
2000
4000
V
R
= 0 V, t
p
= 10 ms, T
vj
= 125 °C,
half-sinewave
V
CC
= 1500 V, V
CEM
≤
2500 V,
V
GE
≤15V
5
-40
65
23
10
125
70
95
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNX 20H2500
IGBT Characteristic Values
3)
Parameter
Collector-emitter saturation
voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Total gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Symbol
V
CEsat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
V
CC
= 1250 V,
I
C
= 2000 A,
R
G
= 3.9
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
V
CC
= 1250 V,
I
C
= 2000 A,
R
G
= 3.3
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
V
CC
= 1250 V,
I
C
= 2000 A,
R
G
= 3.9
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
V
CC
= 1250 V,
I
C
= 2000 A,
R
G
= 3.3
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
V
CC
= 1500 V,
R
Gon
= 3.9
Ω,
R
Goff
= 22
Ω,
V
GE
≤
15 V,
L
σ
= 200 nH
t
psc
=10
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= 2000 A,
V
GE
= 15 V
V
CE
= 2500 V, V
GE
= 0 V,
V
CE
= 0 V, V
GE
=
±20
V,
I
C
= 360 mA, V
CE
= V
GE
,
Conditions
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 125 °C
T
vj
= 125 °C
T
vj
= 25 °C
5
7
18.6
315
25.5
5.3
1.2
1.1
0.9
1.0
2.0
2.3
0.7
0.7
3.0
min
typ
2.20
2.70
35
max
2.60
3.00
100
±500
8.5
Unit
V
V
mA
nA
V
µC
nF
nF
nF
µs
µs
µs
µs
µs
µs
µs
µs
J
I
C
= 2000 A, V
CE
= 1250 V, V
GE
= -15 to
15 V
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Turn-on energy
E
on
T
vj
= 125°C
4.0
J
T
vj
= 25°C
3.0
J
Turn-off energy
E
off
T
vj
= 125°C
3.6
J
T
vj
= 25°C
12000
A
Short circuit current
I
SC
T
vj
= 125°C
11000
A
3)
Characteristic values according to IEC 60747-9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04
page 2 of 9
5SNX 20H2500
Diode Characteristic Values
4)
Parameter
Forward voltage
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery energy
4)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
I
F
= 2000 A
Conditions
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
V
CC
= 1250 V,
I
F
= 2000 A,
R
G
= 3.9
Ω,
V
GE
=
±15
V,
L
σ
= 200 nH
inductive load
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
min
typ
1.95
1.90
1100
1600
1000
1900
1.7
1.8
0.9
1.7
max
2.20
2.20
Unit
V
V
A
A
µC
µC
µs
µs
J
J
Characteristic values according to IEC 60747-2
Thermal Properties
Parameter
IGBT thermal resistance
junction to case
Diode thermal resistance
junction to case
IGBT thermal resistance case
to heatsink
Diode thermal resistance
case to heatsink
Operating junction
temperature
Symbol
R
th(j-c)
IGBT
R
th(j-c)
Diode
R
th(c-h)
IGBT
R
th(c-h)
Diode
T
vjop
Heatsink flatness :
Complete module area < µm
Each submodule area < 50 µm
Roughness : < 6.3 µm
5
Conditions
min
typ
max
5.5
11
1
2
125
Unit
K/kW
K/kW
K/kW
K/kW
°C
Mechanical Properties
Parameter
Dimensions
Symbol
L* W* H
Conditions
Typical , see outline drawing
min
typ
max
Unit
mm
236*150*26
Clearance distance
Surface creepage distance
Weight
D
C
D
SC
acc. IEC 60664-1 and EN50124-1
acc. IEC 60664-1 and EN50124-1
10
23
2.2
mm
mm
kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04
page 3 of 9
5SNX 20H2500
Electrical configuration
C (Collector)
E (Emitter)
G (Gate)
AE (Aux. Emitter)
Outline drawing
StakPak H6
This is an electrostatic sensitive device.
Please observe the international standard IEC 60747-1, chapter IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04
page 4 of 9
5SNX 20H2500
I
C
[A]
4000
25 °C
125 °C
I
F
[A]
4000
25 °C
125 °C
3000
3000
2000
2000
1000
1000
0
0.5
1.5
2.5
3.5
4.5
0
1.0
1.5
2.0
2.5
V
CE
[V]
V
F
[V]
Fig. 1
Typical IGBT on-state characteristics
Fig. 2
Typical diode on-state characteristics
9000
8500
8000
7500
7000
6500
6000
I
C
[A]
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
2
4
V
CE
[V]
6
8
10
V
GE
= 10 V
V
GE
= 9 V
V
GE
= 11 V
V
GE
= 12 V
I
C
[A]
V
GE
= 13 V
V
GE
= 14 V
T
vj
= 25 °C
V
GE
= 15 V
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
2
4
V
CE
[V]
6
8
10
V
GE
= 10 V
V
GE
= 9 V
V
GE
= 11 V
V
GE
= 12 V
V
GE
= 13 V
V
GE
= 14 V
T
vj
= 125 °C
V
GE
= 15 V
Fig. 3
Typical IGBT output characteristics
at T
vj
= 25 °C
Fig. 4
Typical IGBT output characteristics
at T
vj
= 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0116-03 June 04
page 5 of 9
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