KST4403
KST4403
Switching Transistor
3
2
1
SOT-23
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
1. Base 2. Emitter 3. Collector
Value
-40
-40
-5
-600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= -0.1mA, I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
= -0.1mA, I
C
=0
V
CE
= -35V, V
BE
= -0.4V
V
CE
= -35V, V
BE
= -0.4V
V
CE
= -1V, I
C
= -0.1mA
V
CE
= -1V, I
C
= -1.0mA
V
CE
= -1V, I
C
= -10mA
*V
CE
= -2V, IC= -150mA
*V
CE
= -2V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -20mA, V
CE
= -10V
f=100MHz
V
CB
= -10V, I
E
=0
f=140KHz
V
CC
= -30V, V
BE
= -2V
I
C
= -150mA, I
B1
= -15mA
V
CC
= -30V, I
C
= -150mA
I
B1
=I
B2
= -15mA
Marking
-0.75
200
8.5
35
255
30
60
100
100
20
Min.
-40
-40
-5
-0.1
-0.1
Max.
Units
V
V
V
µA
µA
300
-0.4
-0.75
-0.95
-1.3
V
V
V
V
MHz
pF
ns
ns
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
2T
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KST4403
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
V
CE
= -2V
-1
V
BE
(sat)
100
-0.1
V
CE
(sat)
10
-1
-10
-100
-1000
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-100
I
C
[mA], COLLECTOR CURRENT
f = 140KHz
I
E
= 0
C
Ob
[pF], CAPACITANCE
V
CE
= -10V
10
-10
-1
-0.0
1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
= -10V
100
10
1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3