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AP60T03GI_14

Description
Simple Drive Requirement
File Size118KB,5 Pages
ManufacturerAPEC
Download Datasheet View All

AP60T03GI_14 Overview

Simple Drive Requirement

AP60T03GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low Gate Charge
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
12mΩ
45A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
30
±20
45
32
120
37.5
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4.0
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
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