KSE13003T
KSE13003T
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
1.5
3
0.75
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector Emitter Saturation Voltage
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
=1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
=125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
= 125Ω
4
1.1
4.0
0.7
21
8
5
Min.
400
Typ.
Max.
10
40
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
µs
µs
µs
Units
V
µA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
KSE13003T
Typical Characteristics
2.0
100
I
C
[A], COLLECTOR CURRENT
V
CE
= 2V
1.6
h
FE
, DC CURRENT GAIN
I
B
= 500mA
I
B
= 450mA
I
B
= 400mA
1.2
I
B
= 350mA
I
B
= 300mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
10
0.8
1
0.4
I
B
= 0mA
0.0
0
1
2
3
4
5
0.1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 4 I
B
t
STG
1
t
STG
, t
F
[
µ
s], TIME
V
BE
(sat)
1
t
F
0.1
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
40
I
C
MAX. (pulse)
35
µ
10
s
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (DC)
1
P
C
[W], POWER DISSIPATION
s
1m
s
5m
30
0
µ
10
s
25
20
15
0.1
10
5
0.01
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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not intended to be an exhaustive list of all such trademarks.
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2
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E
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I
2
C™
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®
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®
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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