3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | R-MUFM-X5 |
| Reach Compliance Code | not_compliant |
| Other features | HIGH RELIABILITY |
| Shell connection | ISOLATED |
| Configuration | BRIDGE, 6 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| JESD-30 code | R-MUFM-X5 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 150 A |
| Number of components | 6 |
| Phase | 3 |
| Number of terminals | 5 |
| Maximum output current | 25 A |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 600 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| 483-3 | 483-1 | 483-2 | JANTX483-3 | JANTX483-2 | JANTX483-1 | |
|---|---|---|---|---|---|---|
| Description | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE | 3 PHASE, 25 A, SILICON, BRIDGE RECTIFIER DIODE |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | unknown | unknow | compli | unknow | unknow |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | BRIDGE, 6 ELEMENTS | BRIDGE, 6 ELEMENTS | BRIDGE, 6 ELEMENTS | BRIDGE, 6 ELEMENTS | BRIDGE, 6 ELEMENTS | BRIDGE, 6 ELEMENTS |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
| JESD-30 code | R-MUFM-X5 | R-MUFM-X5 | R-MUFM-X5 | R-MUFM-X5 | R-MUFM-X5 | R-MUFM-X5 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 150 A | 150 A | 150 A | 150 A | 150 A | 150 A |
| Number of components | 6 | 6 | 6 | 6 | 6 | 6 |
| Phase | 3 | 3 | 3 | 3 | 3 | 3 |
| Number of terminals | 5 | 5 | 5 | 5 | 5 | 5 |
| Maximum output current | 25 A | 25 A | 25 A | 25 A | 25 A | 25 A |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 600 V | 200 V | 400 V | 660 V | 460 V | 240 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maker | Microsemi | Microsemi | Microsemi | Microsemi | - | - |
| package instruction | R-MUFM-X5 | - | - | R-MUFM-X5 | R-MUFM-X5 | R-MUFM-X5 |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | - |
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