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SSF4004S

Description
Advanced MOSFET process technology
File Size487KB,8 Pages
ManufacturerSILIKRON
Websitehttp://www.silikron.com
Download Datasheet View All

SSF4004S Overview

Advanced MOSFET process technology

SSF4004S
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
40V
2.3mΩ (typ.)
180A
TO-220
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description
SSF4004S utilizes the latest processing techniques to achieve high cell density and reduces on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°
C
I
D
@ TC = 100°
C
I
D
@ TC = 25°
C
I
DM
P
D
@TC = 25°
C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
180
120
75
710
200
1.3
40
± 20
960
80
-55 to +175
W
W/°
C
V
V
mJ
A
°
C
A
Units
©
Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
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