BZV55
500 mW Surface Mounted Zener Diode
Voltage
2.4 to 75 V
Power Dissipation
500 mW
SOD80C (MINIMELF)
FEATURES
Silicon Planar Power Zener Diodes.
For use as low voltage stabilizer or voltage reference.
The Zener voltages are graded according to the
international E 24 standard. Higher Zener voltages
and 1% tolerance available on request.
Diodes available in these tolerance series:
±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.
Solder dip 260ºC, 3.5s
AEC-Q101 qualified
Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260º C
MECHANICAL DATA
Case
:
SOD80C (MINIMELF) (Glass).
Polarity
:
As marked on the body.
Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Used for basic regulation functions in most electronic
applications, Zener diodes offer a cheaper alternative to IC
solutions.
Maximum Ratings and Thermal Characteristics at 25 ºC
(Unless otherwise specified)
Symbol
Parameter
Zener current (see Table "Characteristics")
Power Dissipation at T
flange
=50°C
Power Dissipation at T
A
=50°C
Junction temperature
Storage temperature range
Continuous forward current
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Peak reverse power dissipation (non-repetitive) t
p
=100µs
1. Mounted on ceramic substrate 10mm x 10mm x 0.6mm
2. T
j
= 150°C
Value
500
400
(1)
-65 to +175
-65 to +175
250
0.38
(1)
0.30
30
(2)
Unit
mW
mW
°C
°C
mA
°C/mW
°C/mW
W
P
tot
P
tot
T
j
T
s
I
F
R
th (j-a)
R
th (j-l)
P
ZSM
NOTES:
www.fagorelectronica.com
Document Name: bzv55_series
Version: May-16
Page Number: 1/8
BZV55
Electrical Characteristics
Maximum V
F
=0.9V at I
F
=10mA
(T
A
= 25 °C unless otherwise noted)
Temp. coefficient of zener voltage
Type
number
y=B
for
±2% Vz
y=F
for
±3% Vz
y=C
for
±5% Vz
BZV55-y2V4
BZV55-y2V7
BZV55-y3V0
BZV55-y3V3
BZV55-y3V6
BZV55-y3V9
BZV55-y4V3
BZV55-y4V7
BZV55-y5V1
BZV55-y5V6
BZV55-y6V2
BZV55-y6V8
BZV55-y7V5
BZV55-y8V2
BZV55-y9V1
BZV55-y10
BZV55-y11
BZV55-y12
BZV55-y13
BZV55-y15
BZV55-y16
BZV55-y18
BZV55-y20
BZV55-y22
BZV55-y24
BZV55-y27
BZV55-y30
BZV55-y33
BZV55-y36
BZV55-y39
BZV55-y43
BZV55-y47
BZV55-y51
BZV55-y56
BZV55-y62
BZV55-y68
BZV55-y75
Notes:
Dynamic resistance
at I
Z
=5mA
f=1kHz
r
zj
(W) Max.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
90
150
180
215
240
(3)
a
vz (% /
°C
)
Min.
-0.08
-0.08
-0.08
-0.08
-0.08
-0.07
-0.04
-0.03
-0.02
+0.01
0
+0.01
+0.01
+0.01
+0.02
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
(3)
at I
Z
=5mA
Reverse leakage current
at T
amb
=25°C
at
at I
Z
=1mA
f=1kHz
r
zj
(W) Max.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
325
350
375
400
450
475
(4)
Max.
-0.06
-0.06
-0.06
-0.05
-0.04
-0.03
-0.01
+0.01
+0.05
+0.06
+0.07
+0.08
+0.09
+0.09
+0.10
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
typ. +0.1
(3)
typ. +0.1
typ. +0.1
(3)
(3)
(3)
I
R
(µA)
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
(Volts)
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10
11
13
14
15
17
19
21
23
25
27
30
33
36
39
43
48
53
at V
R
80
(3)
(3)
(3)
300
(4)
(4)
(4)
+0.04
(3)
(3)
(3)
+0.12
(3)
(3)
(3)
130
(3)
(3)
350
(4)
(4)
+0.04
(3)
(3)
+0.12
(3)
(3)
170
(3)
(3)
375
(4)
(4)
+0.04
(3)
(3)
+0.12
(3)
(3)
200
(3)
(3)
(3)
425
(4)
(4)
(4)
255
(4)
500
(4)
typ. +0.1
(3)
1. Tested with pulses t
p
= 5 ms.
2. Valid provided that electrodes are kept at ambient temperature.
3. at I
Z
= 2.0 mA
4. at I
Z
= 0.5 mA
y= Zener voltage tolerance designator (see next page for V
Z
specifications)
www.fagorelectronica.com
Document Name: bzv55_series
Version: May-16
Page Number: 3/8
BZV55
Rating And Characterictics Curves
Tamb = 25°C, unless otherwise noted
Breakdown characteristics
at T
j
= constant (pulsed)
mA
50
40
30
T
j
= 25 °C
2V7
3V3
3V9
4V7
5V8
6V8
8V2
I
Z
0V8
20
Test current I
Z
5 mA
10
0
0
1
2
3
4
5
V
Z
6
7
8
9
10V
Breakdown characteristics
at T
j
= constant (pulsed)
mA
30
10
12
15
18
22
T
j
= 25 °C
I
Z
20
10
Test current I
Z
5 mA
27
33
0
0
10
20
V
Z
30
40V
www.fagorelectronica.com
Document Name: bzv55_series
Version: May-16
Page Number: 5/8
Power technology
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