BZX55 Series
0.5 W Silicon Planar Zener Diodes
Voltage
2.4 to 200 V
FEATURES
Silicon Planar chip junction
Low leakage current
High surge current and zener capability
Low differential resistance
Tolerance series ± 2%; ±5%
Low forward voltage drop
Solder dip 260ºC, 10s
Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
MECHANICAL DATA
Case
:
DO-204AH (DO-35). Epoxy meets UL 94V-0
flammability rating.
Polarity
:
Color band denotes cathode end.
Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test
TYPICAL APPLICATIONS
Used for basic regulation functions in most electronic
applications, Zener diodes offer a cheaper alternative to IC
solutions.
DO-204AH
(DO-35
Glass)
Current
500 mW
Maximum Ratings and Electrical Characteristics at 25 ºC
SYMBOL
TYPE NUMBER
Power dissipation at Tamb = 25 °C
Operating Temperature Range
Storage Temperature Range
Value
500
(1)
Unit
mW
°C
°C
°C/W
P
tot
T
j
T
stg
R
thj-a
NOTES:
-55 to + 175
-55 to + 175
300
(1)
Max. thermal resistance junction to ambient air
(1).
Valid provided that leads at a distance of 3/8" from case are kept at ambient temperature.
www.fagorelectronica.com
Document Name: bzx55
Version: Apr-14
Page Number: 1/8
BZX55 Series
0.5 W Silicon Planar Zener Diodes
Ordering information
PREFERRED P/N
BZX55C20 TR
PACKAGE CODE
TR
DELIVERY MODE
14" diameter tape and reel
BASE QUANTITY
10,000
UNIT WEIGHT (g)
0.219
Package Outline Dimensions: (mm)
DO-204AH (DO-35 Glass)
ø 0.52 max
3.9 max
59.5
± 0.5
Mounting instructions:
1. Min. distance from body to soldering point, 4 mm.
2. Do not bend lead at a point closer than 2 mm. to the body.
www.fagorelectronica.com
Document Name: bzx55
ø 1.9 max
Version: Apr-14
Page Number: 2/8
BZX55 Series
0.5 W Silicon Planar Zener Diodes
Ratings and Characteristics
(Ta 25 ºC unless otherwise noted)
Breakdown characteristics
at T
j
= constant (pulsed)
mA
50
40
30
T
j
= 25 °C
2V7
3V3
3V9
4V7
5V8
6V8
8V2
I
Z
0V8
20
Test current I
Z
5 mA
10
0
0
1
2
3
4
5
V
Z
6
7
8
9
10V
Breakdown characteristics
at T
j
= constant (pulsed)
mA
30
10
12
15
18
22
T
j
= 25 °C
I
Z
20
10
Test current I
Z
5 mA
27
33
0
0
10
20
V
Z
30
40V
www.fagorelectronica.com
Document Name: bzx55
Version: Apr-14
Page Number: 5/8
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
