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SSF1090A

Description
Advanced trench MOSFET process technology
File Size714KB,8 Pages
ManufacturerSILIKRON
Websitehttp://www.silikron.com
Download Datasheet View All

SSF1090A Overview

Advanced trench MOSFET process technology

                                
SSF1090A
 
Main Product Characteristics:
V
DSS
R
DS
(on)
I
D
100V
72mΩ(typ)
15A
D2PAK
 
 
Schematic diagram
 
Marking and pin
Assignment
 
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
 
 
 
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications 
Absolute max Rating:
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
Max.
15
10
60
41.7
0.28
100
± 20
135
3
-55 to + 175
W
W/°C
V
V
mJ
A
°C
A
Units
©
Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com 
Version : 1.0
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