|
50G6P43 |
50U6P43 |
| Description |
DIODE 3 PHASE, 50 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode |
DIODE 3 PHASE, 50 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode |
| Maker |
Toshiba Semiconductor |
Toshiba Semiconductor |
| package instruction |
R-PUFM-X5 |
R-PUFM-X5 |
| Reach Compliance Code |
unknown |
unknown |
| Other features |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
| Shell connection |
ISOLATED |
ISOLATED |
| Configuration |
BRIDGE, 6 ELEMENTS |
BRIDGE, 6 ELEMENTS |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
BRIDGE RECTIFIER DIODE |
BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) |
1.2 V |
1.2 V |
| JESD-30 code |
R-PUFM-X5 |
R-PUFM-X5 |
| Maximum non-repetitive peak forward current |
660 A |
660 A |
| Number of components |
6 |
6 |
| Phase |
3 |
3 |
| Number of terminals |
5 |
5 |
| Maximum operating temperature |
150 °C |
150 °C |
| Minimum operating temperature |
-40 °C |
-40 °C |
| Maximum output current |
50 A |
50 A |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
FLANGE MOUNT |
FLANGE MOUNT |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum repetitive peak reverse voltage |
400 V |
1600 V |
| Maximum reverse current |
0.005 µA |
0.005 µA |
| surface mount |
NO |
NO |
| Terminal form |
UNSPECIFIED |
UNSPECIFIED |
| Terminal location |
UPPER |
UPPER |