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BSL211SPH6327

Description
Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6
CategoryDiscrete semiconductor    The transistor   
File Size348KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSL211SPH6327 Overview

Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6

BSL211SPH6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)26 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.7 A
Maximum drain-source on-resistance0.067 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)18.8 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Rev
2.0
BSL211SP
OptiMOS
-P Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150°C operating temperature
Avalanche rated
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-20
67
-4.7
P-TSOP6-6
V
mΩ
A
4
5
6
Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249­2­21
3
2
1
Type
Package
Tape and reel
Marking
Gate
pin 3
Drain
pin 1,2,
5,6
Source
pin 4
BSL211SP
P-TSOP6-6
H6327:
3000pcs/r.
sPB
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
A
-4.7
-3.8
Pulsed drain current
T
A
=25°C
I
D puls
-18.8
Avalanche energy, single pulse
I
D
=-4.7 A ,
V
DD
=-10V,
R
GS
=25Ω
E
AS
26
mJ
Reverse diode dv/dt
I
S
=-4.7A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
2
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
ESD Class
55/150/56
Class 0
JESD22-A114-HBM
Page 1
2014-01-09

BSL211SPH6327 Related Products

BSL211SPH6327 BSL211SPL6327HTSA1
Description Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6 MOSFET P-CH 20V 4.7A TSOP-6
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code TSOP TSOP
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 26 mJ 26 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 4.7 A 4.7 A
Maximum drain-source on-resistance 0.067 Ω 0.067 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 18.8 A 18.8 A
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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