NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h
FE
characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* I
C
cont 3.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ZTX618
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Practical Power Dissipation*
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
totp
P
tot
T
j
:T
stg
VALUE
20
20
5
10
3.5
500
1.5
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
W
°C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX618
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7
80
210
0.93
0.86
200
300
170
40
100
400
450
300
85
140
23
170
400
30
MHz
pF
ns
ns
MIN.
20
20
5
TYP.
100
27
8.3
100
100
100
15
150
255
1.05
1.0
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=16V
V
EB
=4V
V
CES
=16V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3.5A, I
B
=50mA*
I
C
=3.5A, I
B
=50mA*
I
C
=3.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZTX618
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:
Junction to Ambient
1
Junction to Ambient
2
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
MAX.
175
116
UNIT
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
160
140
120
100
80
60
40
20
0
D=1(D.C.)
t1
D=t1
tP
Max Power Dissipation - (Watts)
180
1.0
0.75
pe
em
tt
en
bi
Am
tP
D=0.5
0.50
r
tu
ra
D=0.2
D=0.1
D=0.05
Single Pulse
e
0.25
0.1ms
1ms
10ms
100ms
1s
10s
100s
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(° C)
Transient Thermal Resistance
Derating curve
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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