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BAT54XV2T1H

Description
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size51KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BAT54XV2T1H Overview

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon

BAT54XV2T1H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Reach Compliance Codecompliant
Factory Lead Time9 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

BAT54XV2T1H Preview

BAT54XV2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
www.onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mA
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
2
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Symbol
V
R
Value
30
Unit
V
1
SOD−523
CASE 502
MARKING DIAGRAM
JVM
G
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.57
I
F
I
FSM
I
FRM
R
qJA
T
J
, T
stg
200 Max
600
300
635
−55 to 125
Unit
mW
mW/°C
mA
mA
mA
°C/W
1
JV
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
°C
Device
BAT54XV2T1G
Package
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
SOD−523
(Pb−Free)
Shipping
3000 / Tape &
Reel
8000 / Tape &
Reel
3000 / Tape &
Reel
8000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad.
BAT54XV2T5G
SBAT54XV2T1G
SBAT54XV2T5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2017
1
August, 2018 − Rev. 12
Publication Order Number:
BAT54XV2T1/D
BAT54XV2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage
(V
R
= 25 V)
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) Figure 1
820
W
+10 V
2k
100
mH
0.1
mF
DUT
50
W
Output
Pulse
Generator
50
W
Input
Sampling
Oscilloscope
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
0.1
mF
t
r
Symbol
V
(BR)R
C
T
I
R
V
F
Min
30
Typ
7.6
0.3
Max
10
2.0
Unit
V
pF
mA
V
t
rr
0.22
0.28
0.35
0.39
0.46
0.24
0.32
0.40
0.50
0.80
5.0
ns
t
p
10%
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAT54XV2
100
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
1000
T
A
= 150°C
100
T
A
= 125°C
T
A
= 85°C
10
1 50°C
10
1 25°C
1.0
85°C
25°C
−40°C
−55°C
0.4
0.5
0.6
1.0
0.1
T
A
= 25°C
0.1
0.0
0.1
0.2
0.3
0.01
0
5
10
15
20
25
30
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
I
FSM
, FORWARD SURGE MAX CURRENT (A)
14
C
T
, TOTAL CAPACITANCE (pF)
12
10
8
6
4
2
0
0
5
10
15
20
25
30
25
Based on square wave currents
T
J
= 25°C prior to surge
20
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
V
R
, REVERSE VOLTAGE (VOLTS)
t
P
, PULSE ON TIME (ms)
Figure 4. Total Capacitance
Figure 5. Forward Surge Current
www.onsemi.com
3
BAT54XV2
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
−X−
D
−Y−
E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
2X
2X
RECOMMENDED
SOLDERING FOOTPRINT*
1.80
2X
L
0.48
0.40
PACKAGE
OUTLINE
2X
L2
DIMENSION: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
4
BAT54XV2T1/D

BAT54XV2T1H Related Products

BAT54XV2T1H SBAT54XV2T5G BAT54XV2T5H
Description Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon 200 mA, 30 V, Schottky Diode, 8000-REEL Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Reach Compliance Code compliant compliant compliant
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.2 W 0.2 W 0.2 W
Maximum repetitive peak reverse voltage 30 V 30 V 30 V
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it Rohs certified? conform to - conform to
Factory Lead Time 9 weeks 6 weeks -

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