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RU4B(Z)

Description
Rectifier Diode, 1 Element, 3A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size88KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

RU4B(Z) Overview

Rectifier Diode, 1 Element, 3A, 800V V(RRM),

RU4B(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.1 µs
surface mountNO
BL
FEATURES
Low cost
GALAXY ELECTRICAL
RU4Y(Z) --- RU4YX(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.5 -- 4.0 A
HIGH EFFICIENCY ECTIFIERS
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU4Y
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
@T
A
=25
(Note1)
(Note2)
(Note3)
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=75
RU4Z
200
140
200
RU4
400
280
400
RU4A
600
420
600
3.0
RU4B
800
560
800
RU4C
1000
700
1000
2.5
RU4YX UNITS
100
70
100
4.0
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
3.5
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J
T
STG
70.0
50.0
100.0
A
1.3
10.0
300.0
1.5
1.6
50.0
500.0
0.85
10.0
4)
V
A
ns
pF
/W
300.0
50
100
70
8
- 55 ----- + 150
- 55 ----- + 150
50
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.I
F(AV)
=2.0A
Document Number 0262048
BL
GALAXY ELECTRICAL
1.

RU4B(Z) Related Products

RU4B(Z) RU4Y(Z) RU4C(Z) RU4Z(Z) RU4(Z)
Description Rectifier Diode, 1 Element, 3A, 800V V(RRM), Rectifier Diode, 1 Element, 3.5A, 100V V(RRM), Rectifier Diode, 1 Element, 2.5A, 1000V V(RRM), Rectifier Diode, 1 Element, 3.5A, 200V V(RRM), Rectifier Diode, 1 Element, 3A, 400V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.6 V 1.3 V 1.6 V 1.3 V 1.5 V
Maximum non-repetitive peak forward current 50 A 70 A 50 A 70 A 50 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3.5 A 2.5 A 3.5 A 3 A
Maximum repetitive peak reverse voltage 800 V 100 V 1000 V 200 V 400 V
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO
Maker Galaxy Microelectronics - Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
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