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ICE60N150

Description
N-Channel Enhancement Mode MOSFET
File Size759KB,4 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet View All

ICE60N150 Overview

N-Channel Enhancement Mode MOSFET

ICE60N150
N-Channel Enhancement Mode MOSFET
Features:
Low
r
DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings
@ Tj = 25°C, Unless Otherwise Specified
Symbol
I
D
I
D
, pulse
E
AS
I
AR
dv/dt
V
GS
P
tot
T
j
, T
stg
Parameter
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
Value
25
75
690
6
50
Product Summary
I
D
V
(BR)DSS
r
DS(ON)
Q
g
T
A
= 25°C
I
D
= 250uA
V
GS
= 10V
V
DS
= 480V
25A
650V
0.13Ω
85nC
Max
Min
Typ
Typ
Pin Description:
D
G
TO-220
S
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
Conditions
T
C
= 25°C
T
C
= 25°C
I
D
= 6A
Limited by
T
j
max
V
DS
= 480V,
I
D
= 25A, T
j
= 125°C
Static
AC (f>Hz)
T
C
= 25°C
M 3 & 3.5 screws
±
20
±
30
208
-55 to +150
60
Symbol
Parameter
Values
Min
-
-
-
Typ
-
-
-
Max
0.6
62
260
Unit
Conditions
Thermal Characteristics
R
thJC
R
thJA
T
sold
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Soldering Temperature, Wave Soldering Only
Allowed At Leads
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
Electrical Characteristics
@ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
GS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain to Source On-State Resistance
Gate Resistance
650
2.5
-
-
-
-
-
-
675
3
0.1
-
-
0.13
0.40
4
-
3.5
1
100
100
0.15
-
-
V
µA
nA
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
j
= 25°C
V
DS
= 650V, V
GS
= 0V, T
j
= 150°C
V
GS
= ±20v, V
DS
= 0V
V
GS
= 10V, I
D
= 13A, T
j
= 25°C
V
GS
= 10V, I
D
= 13, T
j
= 150°C
f
= 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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