BCP53T3 datasheet, PDF - EEWORLD Datasheet

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BCP53T3: Description1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BCP53T3 Overview

1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN

BCP53T3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-261AA
package instruction	CASE 318E-04, 4 PIN
Contacts	4
Manufacturer packaging code	CASE 318E-04
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-261AA
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

BCP53T3 Preview

BCP53 Series

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT−223 package

which is designed for medium power surface mount applications.

•

High Current

•

NPN Complement is BCP56

•

The SOT−223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering,

eliminating the possibility of damage to the die

•

Device Marking:

BCP53T1 = AH

BCP53−10T1 = AH−10

BCP53−16T1 = AH−16

•

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T

C

= 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation

@ T

A

= 25°C (Note 1)

Derate above 25°C

Operating and Storage

Temperature Range

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

1.5

12

T

J

, T

stg

−65 to +150

W

mW/°C

°C

Value

−80

−100

−5.0

1.5

Unit

Vdc

Adc

http://onsemi.com

MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

COLLECTOR 2, 4

1

BASE

EMITTER 3

MARKING DIAGRAM

4

1

3

SOT−223

CASE 318E

STYLE 1

A

Y

W

XXXXX

G

2

AYW

XXXXXG

G

1

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

(*Note: Microdot may be in either location)

ORDERING INFORMATION

Device

BCP53T1G

SBCP53−10T1G

BCP53−10T1G

SBCP53−10T1G

BCP53−16T1G

SBCP53−16T1G

Package

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

Shipping

†

1000/Tape & Reel

4000/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Ambient

(Surface Mounted)

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

Symbol

R

qJA

T

L

260

10

Max

83.3

Unit

°C/W

°C

s

BCP53−16T3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

©

Semiconductor Components Industries, LLC, 2013

1

September, 2013 − Rev. 10

Publication Order Number:

BCP53T1/D

BCP53 Series

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Breakdown Voltage

(I

C

= −100

mAdc,

I

E

= 0)

Collector−Emitter Breakdown Voltage

(I

C

= −1.0 mAdc, I

B

= 0)

Collector−Emitter Breakdown Voltage

(I

C

= −100

mAdc,

R

BE

= 1.0 kW)

Emitter−Base Breakdown Voltage

(I

E

= −10

mAdc,

I

C

= 0)

Collector−Base Cutoff Current

(V

CB

= − 30 Vdc, I

E

= 0)

Emitter−Base Cutoff Current

(V

EB

= − 5.0 Vdc, I

C

= 0)

V

(BR)CBO

−100

V

(BR)CEO

−80

V

(BR)CER

−100

V

(BR)EBO

−5.0

I

CBO

−

I

EBO

−

−10

−

−100

mAdc

−

nAdc

−

Vdc

−

Vdc

−

Vdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= − 5.0 mAdc, V

CE

= − 2.0 Vdc)

All Part Types

(I

C

= −150 mAdc, V

CE

= − 2.0 Vdc)

BCP53, SBCP53

BCP53−10, SBCP53−10

BCP53−16, SBCP53−16

(I

C

= − 500 mAdc, V

CE

= − 2.0 Vdc)

All Part Types

Collector−Emitter Saturation Voltage

(I

C

= − 500 mAdc, I

B

= − 50 mAdc)

Base−Emitter On Voltage

(I

C

= − 500 mAdc, V

CE

= − 2.0 Vdc)

h

FE

25

40

63

100

25

V

CE(sat)

−

V

BE(on)

−

−1.0

−

−0.5

Vdc

−

250

160

250

−

Vdc

−

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mAdc, V

CE

= − 5.0 Vdc, f = 35 MHz)

f

T

−

50

−

MHz

http://onsemi.com

2

BCP53 Series

TYPICAL CHARACTERISTICS

V

ce(sat)

, COLLECTOR EMITTER SAT-

URATION VOLTAGE (V)

2.0

1.8

h

FE

, DC CURRENT GAIN

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.001

0.01

0.1

1

10

I

C

, COLLECTOR CURRENT (mA)

+25°C

+150°C

−55°C

IC/IB = 10

BCP53, −10, −16

200

180

160

140

120

100

80

60

40

20

0

0.001

0.01

0.1

1

10

I

C

, COLLECTOR CURRENT (A)

25°C, 5 V

25°C, 2 V

150°C, 2 V

150°C, 5 V

−55°C, 5 V

−55°C, 2 V

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

180

150°C, 5 V

160

h

FE

, DC CURRENT GAIN

h

FE

, DC CURRENT GAIN

140

120

100

80

60

40

20

0

0.001

0.01

0.1

1

10

I

C

, COLLECTOR CURRENT (A)

0

−55°C, 5 V

−55°C, 2 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

250

200

150

100

50

300

Figure 2. DC Current Gain vs. Collector

Current (BCP53)

150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

−55°C, 5 V

−55°C, 2 V

0.001

0.01

0.1

1

10

I

C

, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain vs. Collector

Current (BCP53−10)

1.2

V

be(sat)

, BASE EMITTER SATURA-

TION VOLTAGE (V)

1.1

1.0

0.9

−55°C

0.8

0.7

0.6

0.5

0.4

+150°C

0.001

0.01

0.1

1

10

+25°C

V

be(sat)

, BASE EMITTER SATURA-

TION VOLTAGE (V)

IC/IB = 10

BCP53, −10

1.2

Figure 4. DC Current Gain vs. Collector

Current (BCP53−16)

IC/IB = 10

1.1

1.0

0.9

−55°C

0.8

0.7

+25°C

0.6

0.5

0.4

+150°C

0.001

0.01

0.1

1

10

BCP53 −16

I

C

, COLLECTOR CURRENT (A)

I

C

, COLLECTOR CURRENT (A)

Figure 5. BCP53, −10 Base Emitter Saturation

Voltage vs. Collector Current

Figure 6. BCP53−16 Base Emitter Saturation

Voltage vs. Collector Current

http://onsemi.com

3

BCP53 Series

TYPICAL CHARACTERISTICS

1.2

V

be(on)

, BASE EMITTER TURN−ON

VOLTAGE (V)

V

be(sat)

, BASE EMITTER SATURA-

TION VOLTAGE (V)

Vce = 2 V

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

+150°C

0.001

0.01

0.1

1

10

+25°C

−55°C

BCP53, −10

1.2

1.1

1.0

0.9

0.8

0.7 +25°C

0.6

0.5

0.4

0.3

0.2

0.001

0.01

0.1

1

10

I

C

, COLLECTOR CURRENT (A)

+150°C

−55°C

Vce = 2 V

BCP53 −16

I

C

, COLLECTOR CURRENT (A)

Figure 7. BCP53, −10 Base Emitter Turn−On

Voltage vs. Collector Current V

BE(on)

V

ce

, COLLECTOR−EMITTER VOLTAGE (V)

1.0

0.9

0.8

CAPACITANCE (pF)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.001

0.01

0.1

1

I

b

, BASE CURRENT (A)

50

40

0

IC = 100 mA

IC = 500 mA

90

80

70

60

BCP53, −10, −16

IC = 1.0 A

IC = 1.5 A

110

Figure 8. BCP53−16 Base Emitter Turn−On

Voltage vs. Collector Current

BCP53−10

100

BCP53

BCP53−16

1

2

3

4

5

VOLTAGE (V)

Figure 9. BCP53, −10, −16 Saturation Region

25

Ic, COLLECTOR CURRENT (A)

10

Figure 10. Input Capacitance

100 ms 10 ms

1s

1 ms

20

CAPACITANCE (pF)

BCP53−10

15

BCP53

10

BCP53−16

1

0.1

CONTINUOUS THERMAL LIMIT

5

0

SINGLE PULSE TEST AT T

amb

= 25°C

0.01

0.1

1

10

100

2

4

6

8

10

12

14

16

18

20

VOLTAGE (V)

Vce, COLLECTOR EMITTER VOLTAGE (V)

Figure 11. Output Capacitance

Figure 12. Standard Operating Area

http://onsemi.com

4

BCP53 Series

PACKAGE DIMENSIONS

D

b1

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,

1994.

2. CONTROLLING DIMENSION: INCH.

DIM

A

A1

b

b1

c

D

E

e

e1

L

L1

H

E

MIN

1.50

0.02

0.60

2.90

0.24

6.30

3.30

2.20

0.85

0.20

1.50

6.70

0°

MILLIMETERS

NOM

MAX

1.63

1.75

0.06

0.10

0.75

0.89

3.06

3.20

0.29

0.35

6.50

6.70

3.50

3.70

2.30

2.40

0.94

1.05

−−−

1.75

2.00

7.00

7.30

10°

−

MIN

0.060

0.001

0.024

0.115

0.009

0.249

0.130

0.087

0.033

0.008

0.060

0.264

0°

INCHES

NOM

0.064

0.002

0.030

0.121

0.012

0.256

0.138

0.091

0.037

−−−

0.069

0.276

−

MAX

0.068

0.004

0.035

0.126

0.014

0.263

0.145

0.094

0.041

−−−

0.078

0.287

10°

4

H

E

1

2

3

E

b

e1

e

q

L

C

A

0.08 (0003)

A1

q

L1

STYLE 1:

PIN 1.

2.

3.

4.

BASE

COLLECTOR

EMITTER

COLLECTOR

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

mm

inches

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor

and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture

of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone:

303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax:

303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email:

orderlit@onsemi.com

N. American Technical Support:

800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature:

http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

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5

BCP53T1/D

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BCP53T3 Related Products

	BCP53T3	BCP53-10T3
Description	1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN	1.5A, 80V, PNP, Si, POWER TRANSISTOR, CASE 318E-04, 4 PIN
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	ON Semiconductor	ON Semiconductor
package instruction	CASE 318E-04, 4 PIN	CASE 318E-04, 4 PIN
Contacts	4	4
Manufacturer packaging code	CASE 318E-04	CASE 318E-04
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1.5 A	1.5 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	63
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz

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