SPC4533W
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC4533W is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
30V/10A,R
DS(ON)
= 25mΩ@V
GS
= 10V
30V/8.0A,R
DS(ON)
= 36mΩ@V
GS
= 4.5V
P-Channel
-30V/-6.0A,R
DS(ON)
= 42mΩ@V
GS
=- 10V
-30V/-3.0A,R
DS(ON)
= 78mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
PIN DESCRIPTION
2011/06/03
Ver.1
Page 1
SPC4533W
N & P Pair Enhancement Mode MOSFET
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
ORDERING INFORMATION
Part Number
SPC4533WS8RGB
Package
SOP- 8P
Part
Marking
SPC4533W
※
SPC4533WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Typical
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150℃)
Pulsed Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=25℃
T
A
=70℃
Symbol
N-Channel
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
R
θJA
30
±20
10
6
20
2.0
-55/150
-55/150
80
80
P-Channel
-30
±20
-6.0
-4.0
-12
Unit
V
V
A
A
W
℃
℃
℃/W
2011/06/03
Ver.1
Page 2
SPC4533W
N & P Pair Enhancement Mode MOSFET
N CHANNEL ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=12V, I
D
=5.0A,
V
GEN
=10V, R
G
=3.3Ω
V
DS
=15V
GS
=0V
f=1MHz
V
DS
=20V,V
GS
=4.5V
I
D
= 10A
7.2
1.4
2.2
570
81
65
4.1
9.8
15.5
6.1
nS
pF
nC
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
T
J
=55℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=10A
V
GS
=4.5V,I
D
=5.6A
V
DS
=15V,I
D
=10A
I
S
=1A,V
GS
=0V
25
18
25
10
25
36
1.2
30
1.0
2.5
±100
1
5
V
nA
uA
A
mΩ
S
V
Symbol
Conditions
Min.
Typ
Max.
Unit
2011/06/03
Ver.1
Page 3
SPC4533W
N & P Pair Enhancement Mode MOSFET
P CHANNEL ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55℃
V
DS
≦-5V,V
GS
=-10V
V
GS
=- 10V,I
D
=-6A
V
GS
=- 4.5V,I
D
=-3A
V
DS
=-10.0V,I
D
=-6A
I
S
=-6A,V
GS
=0V
-30
-1.0
-2.5
±100
-1
-5
-6
0.035
0.065
6
0.042
0.078
-1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-20V, V
GS
=-4.5V
I
D
=-6A
6.4
2.7
3.1
650
270
104
9
16
21
22
pF
nC
V
DS
=-24V,V
GS
=0V
f=1MHz
V
DD
=-12V, I
D
=-5.0A,
V
GEN
=-10V
R
G
=3.3Ω
ns
2011/06/03
Ver.1
Page 4
SPC4533W
N & P Pair Enhancement Mode MOSFET
N CHANNEL TYPICAL CHARACTERISTICS
Fig. 1 Typical Output Characteristics
Fig. 2 On-Resistance vs. Gate Voltage
Fig. 3 Forward Characteristics of Diode
Fig. 4 Gate Charge Characteristics
Fig. 5 Vgs vs. Junction Temperature
Fig. 6 On-Resistance vs. Junction Temperature
2011/06/03
Ver.1
Page 5
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