SPN4992
Dual N-Channel Enhancement Mode
MOSFET
DESCRIPTION
The SPN4992 is the Dual N-Channel logic enhancement
mode power field effect transistor which is produced using
super high cell density DMOS trench technology. The
SPN4992 has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It
has been optimized for low gate charge, low R
DS(ON)
and
fast switching speed.
FEATURES
100V/2A, R
DS(ON)
= 180mΩ@V
GS
= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOP-8 package design
APPLICATIONS
High Frequency Small Power Switching for
MB/NB/VGA
Network DC/DC Power System
Load Switch
PIN CONFIGURATION
SOP-8
PART MARKING
2012/09/05
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SPN4992
Dual N-Channel Enhancement Mode
MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN4992
SPN4992S8RGB
SOP-8
※
SPN4992S8RGB : 13”Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
R
θJA
Typical
100
±20
Unit
V
V
A
A
W
℃
℃
℃
/W
2.8
2.2
10
2.8
-55/150
-55/150
80
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SPN4992
Dual N-Channel Enhancement Mode
MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=125℃
V
DS
≥5V,V
GS
=10V
100
1
3.0
±100
25
250
2.2
0.160
5.6
0.180
1.2
V
nA
uA
A
Ω
S
V
R
DS(on)
V
GS
= 10V,I
D
=2A
gfs
V
DS
=5V,I
D
=5A
V
SD
I
S
=1A,V
GS
=0V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V, I
D
=2A,
V
GEN
=10V, R
G
=3.3Ω
V
DS
=15V,V
GS
=0V
f=1MHz
V
DS
=50V,V
GS
=10V
I
D
= 2A
10
2.5
4.5
430
56
35
6.5
10
13
3.4
16
nC
pF
nS
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SPN4992
Dual N-Channel Enhancement Mode
MOSFET
TYPICAL CHARACTERISTICS
2012/09/05
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SPN4992
Dual N-Channel Enhancement Mode
MOSFET
TYPICAL CHARACTERISTICS
2012/09/05
V.1
Page 5
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