BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
■
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
■
■
■
D
S
D
G
G
S
TO - 92
SOT - 23
Absolute Maximum Ratings
T
Symbol
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage
a
= 25°C unless otherwise noted
Parameter
Drain-Gate Voltage (R
GS
≤
1M
Ω
)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
BS170
60
60
± 20
500
1200
MMBF170
Units
V
V
V
500
800
- 55 to 150
300
mA
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
°C
°C
Thermal Characteristics
T
Symbol
P
D
R
θJA
a
= 25°C unless otherwise noted
Parameter
Maximum Power Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
BS170
830
6.6
150
MMBF170
300
2.4
417
Units
mW
mW/°C
°C/W
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
1
www.fairchildsemi.com
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
T =25°C unless otherwise noted
a
Symbol
Off Characteristics
BV
DSS
I
DSS
I
GSSF
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Conditions
V
GS
= 0 V, I
D
= 100
μ
A
V
DS
= 25 V, V
GS
= 0 V
V
GS
= 15V, V
DS
= 0 V
Type
All
All
All
Min.
60
Typ.
Max.
Units
V
0.5
10
μ
A
nA
On Characteristics
(Notes 1)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
All
All
BS170
0.8
2.1
1.2
320
320
3
5
V
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 200 mA
Forward Transconductance
V
DS
= 10 V, I
D
= 200 mA
Ω
mS
V
DS
≥
2 V
DS(on)
, I
D
= 200 mA MMBF170
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
All
All
All
24
17
7
40
30
10
pF
pF
pF
Switching Characteristics
(Notes 1)
t
on
Turn-On Time
V
DD
= 25 V, I
D
= 200 mA,
V
GS
= 10 V, R
GEN
= 25
Ω
V
DD
= 25 V, I
D
= 500 mA,
V
GS
= 10 V, R
GEN
= 50
Ω
t
off
Turn-Off Time
V
DD
= 25 V, I
D
= 200 mA,
V
GS
= 10 V, R
GEN
= 25
Ω
V
DD
= 25 V, I
D
= 500 mA,
V
GS
= 10 V, R
GEN
= 50
Ω
Note:
1.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%.
BS170
MMBF170
BS170
MMBF170
10
10
10
10
ns
ns
© 2009 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E1
2
www.fairchildsemi.com
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