BF493S
High Voltage Transistor
PNP Silicon
Features
•
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−350
−350
−6.0
−500
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
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COLLECTOR
3
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
12
TO−92
CASE 29
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BF
493S
AYWW
G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
BF493SG
1
March, 2007 − Rev. 4
Publication Order Number:
BF493S/D
BF493S
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= −250 Vdc)
Emitter Cutoff Current
(V
EB
= −6.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= −250 Vdc, I
E
= 0, T
A
= 25°C)
(V
CB
= −250 Vdc, I
E
= 0, T
A
= 100°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
Base −Emitter On Voltage
(I
C
= −20 mA, I
B
= −2.0 mA)
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 20 MHz)
Common−Emitter Feedback Capacitance
(V
CB
= −100 Vdc, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
f
T
C
re
50
−
−
1.6
MHz
pF
h
FE
25
40
V
CE(sat)
V
BE(sat)
−
−
−
−
−2.0
−2.0
Vdc
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
EBO
I
CBO
−
−
−0.005
−1.0
−350
−350
−6.0
−
−
−
−
−
−10
0.1
Vdc
Vdc
Vdc
nAdc
mAdc
mAdc
Symbol
Min
Max
Unit
150
100
hFE, DC CURRENT GAIN
T
J
= +125°C
V
CE
= −10 Vdc
+25°C
70
50
−55°C
30
20
15
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
−50
−80
−100
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
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2
BF493S
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BF493S/D
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