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BU208D

Description
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size92KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

BU208D Overview

Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

BU208D Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage700 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.25
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature115 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment60 W
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
VCEsat-Max1 V

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Description Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 6A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 3A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to incompatible incompatible conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compli compli compliant compliant compliant compliant compliant compliant
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A 4 A 15 A 6 A 6 A 3 A 15 A 5 A
Collector-emitter maximum voltage 700 V 400 V 600 V 60 V 40 V 325 V 700 V 60 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
JEDEC-95 code TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 60 W 50 W 50 W 115 W 115 W 75 W 10 W 120 W 50 W
Maximum power dissipation(Abs) 60 W 50 W 50 W 117 W 115 W 75 W 10 W 115 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker CDIL[Continental Device India Pvt. Ltd.] - - - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
Minimum DC current gain (hFE) 2.25 9 8 50 30 - 2.5 20 25
Maximum operating temperature 115 °C - 140 °C 175 °C 175 °C 200 °C 115 °C 175 °C -
Nominal transition frequency (fT) 4 MHz - 3 MHz 0.8 MHz 1 MHz 6 MHz 8 MHz 1 MHz 4 MHz
VCEsat-Max 1 V 1 V 8 V - - 3 V 5 V 3 V 1 V
package instruction - FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2

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