
Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | conform to |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| Reach Compliance Code | compliant |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 700 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 2.25 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 115 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 60 W |
| Maximum power dissipation(Abs) | 60 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
| VCEsat-Max | 1 V |
| BU208D | 2SD1168 | 2SD869 | BDY73 | BDY38 | BU326 | BU205 | BDY20 | CDN055 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 4A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 6A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 3A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin | Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | conform to | incompatible | incompatible | conform to | conform to | conform to | conform to | conform to | conform to |
| Reach Compliance Code | compliant | compli | compli | compliant | compliant | compliant | compliant | compliant | compliant |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 5 A | 5 A | 4 A | 15 A | 6 A | 6 A | 3 A | 15 A | 5 A |
| Collector-emitter maximum voltage | 700 V | 400 V | 600 V | 60 V | 40 V | 325 V | 700 V | 60 V | 50 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power consumption environment | 60 W | 50 W | 50 W | 115 W | 115 W | 75 W | 10 W | 120 W | 50 W |
| Maximum power dissipation(Abs) | 60 W | 50 W | 50 W | 117 W | 115 W | 75 W | 10 W | 115 W | 50 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | CDIL[Continental Device India Pvt. Ltd.] | - | - | - | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |
| Minimum DC current gain (hFE) | 2.25 | 9 | 8 | 50 | 30 | - | 2.5 | 20 | 25 |
| Maximum operating temperature | 115 °C | - | 140 °C | 175 °C | 175 °C | 200 °C | 115 °C | 175 °C | - |
| Nominal transition frequency (fT) | 4 MHz | - | 3 MHz | 0.8 MHz | 1 MHz | 6 MHz | 8 MHz | 1 MHz | 4 MHz |
| VCEsat-Max | 1 V | 1 V | 8 V | - | - | 3 V | 5 V | 3 V | 1 V |
| package instruction | - | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |