INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU208D
DESCRIPTION
·High
Voltage-V
CES
= 1500V(Min.)
·Collector
Current- I
C
= 8.0A
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
1500
700
10
8.0
15
150
175
-65~175
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU208D
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
700
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2A
1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2A
V
CE
= 1500V; V
BE
= 0
V
CE
= 1500V; V
BE
= 0; T
C
= 125℃
V
EB
= 5.0V; I
C
= 0
1.3
1.0
2.0
300
V
I
CES
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 1A; V
CE
= 5V
8
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A; V
CE
= 5V; f
test
= 5MHz
7
MHz
V
ECF
C-E Diode Forward Voltage
I
F
= 4A
2
V
Switching Times( Inductive load)
t
s
Storage Time
I
C
= 4.5A; I
B
= 1.8A; L
B
= 3μH;
V
CC
= 140V, L
C
= 0.9mH
7
μs
t
f
Fall Time
0.55
μs
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
