P200PH02D2K0 datasheet, PDF - EEWORLD Datasheet

P200PH02D2K0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR3/4; CategoryAnalog mixed-signal IC Trigger device; File Size448KB，6 Pages; ManufacturerIXYS

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P200PH02D2K0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR3/4

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	40 µs
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	2700 A
Maximum on-state current	355000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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