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SHD724502

Description
1200 VOLT 35 AMP IGBT DEVICE
File Size35KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet View All

SHD724502 Overview

1200 VOLT 35 AMP IGBT DEVICE

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1004, REV. A
Formerly part number SHDG1025
SHD724502
1200 VOLT, 35 AMP IGBT DEVICE
HIGH SPEED, IMPROVED SCSOA
WITH FAST REVERSE RECOVERY DIODE
ELECTRICAL CHARACTERISTICS
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I
C
= 250
μA,
V
GE
= 0V
Continuous Collector Current
Gate to Emitter Voltage
Gate-Emitter Leakage Current I
GE
= +/-20V
Gate Threshold Voltage, I
C
=2mA
Zero Gate Voltage Collector Current
V
GE
=0V V
CE
= 1200 V, T
i
=25 C
V
CE
= 800 V, T
i
=125 C
Collector to Emitter Saturation Voltage
I
C
= 35A, V
GE
= 15V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-off Energy Loss
Turn-on Energy Loss
(I
C
= 30A, V
GE
= 15V, V
CE
= 600 V, R
G
= 5
Ω
Junction-to-Case Thermal Resistance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
off
E
on
R
θJC
-
8400
350
90
90
50
270
80
4.7
5.5
-
-
pF
V
CE(SAT)
-
2.7
3.3
o
o
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
BV
CES
T
C
= 25
O
C
T
C
= 90 C
V
GE
I
GES
V
GE(TH)
I
CES
O
-
-
-
-
4.5
-
-
-
-
-
6.0
-
1200
40
(1)
35
+/-20
+/-500
7.5
1000
5.0
V
A
V
nA
V
μA
mA
V
I
C
-
-
-
-
-
-
-
-
-
-
-
0.35
o
nsec
mJ
mJ
C/W
221 West Industry Court
Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
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