BC807A datasheet, PDF - EEWORLD Datasheet

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BC807A: DescriptionSmall Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2; CategoryDiscrete semiconductor The transistor; File Size171KB，1 Pages; ManufacturerBCD Semi（Diodes）

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BC807A Overview

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2

BC807A Parametric

Parameter Name	Attribute value
Maker	BCD Semi（Diodes）
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	PNP
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON

BC807A Preview

BC807A

BC807A Silicon PNP Epitaxial Transistor

Description

:

The BC807A is designed for audio frequency general amplifier applications.

Features:

●Excellent

h

FE

Linearity

●Complementary

to BC817A

Chip Appearance

Chip Size

Chip Thickness

Bonding Pad Size

Front Metal

Backside Metal

Scribe line width

Wafer Size

Base

Emitter

440um×440um

210±20um

110um×110um

Al

Au

50um

6 inch

Electrical Characteristics( Ta=25℃)

Characteristic

Collector Cutoff Current

Emitter Cutoff Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector Saturation Voltage

Symbol

I

CBO

I

EBO

BV

CBO

BV

CEO

BV

EBO

h

FE

V

CE

(sat)

Test Condition

V

CB

=-45V, I

E

=0

V

EB

=-5V, I

C

=0

I

C

=-0.1mA

I

C

=-1mA

I

E

=-0.1mA

V

CE

=-1V, I

C

=-100mA

I

C

=-500mA,I

B

=-50mA

-50

-45

-5.0

120

560

-0.6

V

Min

Max

-0.1

Unit

uA

V

Jan 2005

Version :0.0

Page 1 of 1

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