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BDX87B

Description
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size46KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BDX87B Overview

Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

BDX87B Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
Reach Compliance Codeunknown
Maximum collector current (IC)12 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment120 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
VCEsat-Max2 V
This Material Copyrighted By Its Respective Manufacturer
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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