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BY328T/R

Description
DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size58KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BY328T/R Overview

DIODE 1500 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BY328T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.45 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1500 V
Maximum reverse current150 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BY328T/R Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BY328
Damper diode
Product specification
Supersedes data of May 1996
1996 Sep 30
Philips Semiconductors
Product specification
Damper diode
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
APPLICATIONS
Damper diode in high frequency
horizontal deflection circuits up to
38 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
BY328
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.

,
a
MAM104
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
R
I
FWM
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
T
tp
= 55
°C;
lead length = 10 mm
see Fig.2
T
amb
= 55
°C;
PCB mounting (see
Fig.5); see Fig.2
T
amb
= 55
°C;
PCB mounting (see
Fig.4); see Fig 2
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
CONDITIONS
MIN.
MAX.
1500
1500
1400
6.0
4.7
3.0
10
60
V
V
V
A
A
A
A
A
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
1996 Sep 30
2
Philips Semiconductors
Product specification
Damper diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
PARAMETER
forward voltage
reverse current
reverse recovery time
CONDITIONS
I
F
= 5 A; T
j
= T
j max
; see Fig.3
I
F
= 5 A; see Fig.3
V
R
= V
Rmax
; T
j
= 150
°C
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.6
when switched to I
F
= 5 A in 50 ns;
T
j
= T
j max
; see Fig.7
BY328
MAX.
1.35
1.45
150
500
V
V
UNIT
µA
ns
t
fr
forward recovery time
500
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
mounted as shown in Fig.5
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
lead length = 10 mm
VALUE
25
75
40
UNIT
K/W
K/W
K/W
1996 Sep 30
3
Philips Semiconductors
Product specification
Damper diode
GRAPHICAL DATA
MBH413
BY328
handbook, halfpage
4
handbook, halfpage
5
MBE936
Ptot
(W)
3
IF
(A)
4
3
2
2
1
1
0
0
2
4
6
IFWM (A)
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
8
0
0
1
VF (V)
2
Dotted line: T
j
= 150
°C;
solid line: T
j
= 25
°C.
Fig.2
Maximum total power dissipation as a
function of working peak forward current.
Fig.3
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
handbook, halfpage
35
10
50
25
7
50
3 cm
2
copper
3 cm
2
copper
30
2
3
MGA200
10
MGA204
25.4
Dimensions in mm.
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
Mounting with additional printed circuit
board for heat sink purposes.
1996 Sep 30
4
Philips Semiconductors
Product specification
Damper diode
BY328
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
t rr
10
25 V
50
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
7 ns.
Source impedance: 50
Ω;
t
r
15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
handbook, halfpage
MGD600
VF
90%
100%
t fr
IF
t
10%
t
Fig.7 Forward recovery time definition.
1996 Sep 30
5
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