BYV36CT/R datasheet, PDF - EEWORLD Datasheet

BYV36CT/R: DescriptionDIODE SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size79KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYV36CT/R Overview

DIODE SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

Parameter Name	Attribute value
Maker	NXP
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.87 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Guideline	IEC-134
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.1 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

BYV36 series

Fast soft-recovery

controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 May 30

1996 Jul 01

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