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SRM10TXV

Description
Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size132KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SRM10TXV Overview

Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

SRM10TXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-XALF-W2
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals2
Maximum output current60 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SRM6 thru SRM12
Series
60 AMPS
STANDARD RECOVERY RECTIFIER
600 - 1200 VOLTS
5
sec
FEATURES:
Replacement for DO-4 or DO-5
Standard recovery: 5
sec
maximum
PIV to 1200 volts
Low reverse leakage current
Hermetically sealed void-free construction
Monolithic single chip construction
High surge rating
Low thermal resistance
Equivalent to 5961-94022
TX, TXV, and Space Level Screening Available
Designer’s Data Sheet
Part Number / Ordering Information
1/
SRM
___ ___ ___
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package Type
__
= Axial
SMS = Surface Mount Square Tab
BTR = Button
Voltage
6 = 600V
8 = 800V
10 = 1000V
12 = 1200V
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM6
SRM8
SRM10
SRM12
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
stg
Axial (__)
SMS
Button (BTR)
Value
600
800
1000
1200
60
800
-65 to +175
3
2.5
1
Units
Volts
(Resistive Load, 60 Hz Sine Wave; Axial, T
L
= 100
o
C; SMS, T
E
= 100
o
C;
Button, T
C
= 100
o
C)
Average Rectified Forward Current
Peak Surge Current
Amps
Amps
o
(8.3 ms Pulse, Half Sine Wave, Superimposed on I
O
, Allow Junction to Reach
Equilibrium Between Pulses, T
L
or T
C
= 55
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
Junction to End Tab
Junction to End
Notes:
C
R
JL
R
JE
R
JC
o
C/W
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C.
Axial (__)
Surface Mount Square Tab (SMS)
Button (BTR)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046F
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