D92-02
®
Pb Free Plating Product
D92-02
TO-3P/TO-247AD
0.142(3.60)
0.125(3.20)
0.640(16.25)
0.620(15.75)
Pb
Ultrafast Recovery Rectifier
Unit: inch (mm)
0.199(5.05)
0.175(4.45)
Features
·
·
·
·
·
·
Ultrafast Recovery Time
Soft Recovery Characteristics
Low Recovery Loss
Low Forward Voltage
High Surge Current Capability
Low Leakage Current
0.600(15.25)
0.580(14.75)
0.839(21.30)
0.819(20.80)
APPLICATIONS
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.170(4.30)
0.145(3.70)
0.798(20.25)
0.777(19.75)
0.087(2.20)
0.070(1.80)
0.095(2.40)
0.030(0.75)
0.017(0.45)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
Positive
D92-02
Negative
Doubler
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
P
D
T
J
T
STG
Torque
R
θJC
Weight
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
T
C
=110°C, Per Diode
T
C
=25°C unless otherwise specified
Test Conditions
Values
220
220
10
20
14
100
83
-40 to +150
-40 to +150
Recommended（M3）
Junction-to-Case
1.1
1.5
6.0
Unit
V
V
A
A
A
A
W
°C
°C
N·m
°C /W
g
T
C
=110°C, Per Package
T
C
=110°C, Per Diode
T
J
=45°C, t=10ms, 50Hz, Sine
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
Parameter
Reverse Leakage Current
Test Conditions
V
R
=220V
V
R
=220V, T
J
=125°C
I
F
=10A
I
F
=10A, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
0.86
--
25
32
2.1
45
5
Max.
50
1
0.95
0.80
--
--
--
--
--
Unit
µA
mA
V
V
ns
ns
A
ns
A
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=100V, I
F
=10A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=100V, I
F
=10A
di
F
/dt=-200A/μs, T
J
=125°C
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
D92-02
®
30
25
20
15
10
T
J
=25°C
100
V
R
=100V
T
J
=125°C
80
I
F
=20A
t
rr
(ns)
I
F
(A)
T
J
=125°C
60
40
I
F
=10A
5
0
0
20
I
F
=5A
1.2
0.8
0.6
1.0
V
F
（V）
Fig1. Forward Voltage Drop vs Forward Current
0.2
0.4
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig2. Reverse Recovery Time vs di
F
/dt
200
25
V
R
=100V
T
J
=125°C
250
V
R
=100V
T
J
=125°C
20
200
I
RRM
(A)
Q
rr
(nc)
15
I
F
=20A
I
F
=10A
150
I
F
=20A
I
F
=10A
I
F
=5A
10
I
F
=5A
100
5
50
0
0
400
600
1000
800
di
F
/dt（A/μs）
Fig3. Reverse Recovery Current vs di
F
/dt
200
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig4. Reverse Recovery Charge vs di
F
/dt
200
1.2
1
10
1
0.8
t
rr
Duty
0.5
0.2
0.1
0.05
Single Pulse
Z
thJC
(K/W)
50
K
f
0.6
I
RRM
10
-1
0.4
Q
rr
10
-2
0.2
0
10
-3 -4
-2
-1
10
-3
10
10
10
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
100 125 150
75
T
J
(°C)
Fig5. Dynamic Parameters vs Junction Temperature
0
25
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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