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UHBS30-1

Description
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size18KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

UHBS30-1 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,

UHBS30-1 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, R-CDFM-F6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)9 A
Collector-based maximum capacity50 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F6
Number of components1
Number of terminals6
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

UHBS30-1 Preview

UHBS30-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI UHBS30-1
is Designed for
PACKAGE STYLE .230 6L FLG
A
.040x45°
C
B
2XØ.130
4X .025 R
.115
.430 D
E
.125
G
H
I
L
F
FEATURES:
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
9.0 A
50 V
30 V
4.0 V
100 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65 C to +150 C
1.5
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
J K
MAXIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10670
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 24 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
MINIMUM TYPICAL MAXIMUM
30
50
4.0
5
10
UNITS
V
V
V
mA
mA
---
pF
dB
V
CE
= 5.0 V
V
CB
= 25 V
V
CE
= 24 V
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 30 W
f = 900 GHz
10
---
50
7.5
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice
.
REV. A
1/1

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