Bulletin I0202J 01/97
IR185BG12DCB
PHASE CONTROL THYRISTORS
Square 185 mils
4"
1200 V
Glassivated MESA
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Reference IR Packaged Part:
25TTS Series
Major Ratings and Characteristics
Parameters
V
TM
V
RRM
I
GT
V
GT
I
H
I
L
Maximum On-state Voltage
Reverse Breakdown Voltage
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
Units
1.25 V
1200 V
60 mA
2V
5 to 100 mA
200 mA
Test Conditions
T
J
= 25°C, I
T
= 16 A
T
J
= 25°C, I
RRM
= 100 µA
(1)
T
J
= 25° C, anode supply = 6 V, resistive load
T
J
= 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20µm)
185 x 185 mils (see drawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR185BG12DCB
Bulletin I0202J 01/97
Ordering Information Table
Device Code
IR
1
185
2
B
3
G
4
12
5
D
6
CB
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: B = Wire Bondable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = V
RRM
Metallization: D = Silver (Anode) - Aluminium (Cathode)
CB
= Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns
2
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IR185BG12DCB
Bulletin I0202J 01/97
Wafer Layout
TOP VIEW
N° 293 Basic Cells
All dimensions are in millimiters (inches)
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