BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
50V
R
DS(ON)
Max
3.5Ω @ V
GS
= 10V
I
D
Max
T
A
= +25°C
200mA
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Mechanical Data
SOT363
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D
2
G
1
S
1
S
2
G
2
D
1
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
BSS138DWQ-7
BSS138DWQ-13
Notes:
Case
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: D = 2016)
M = Month (ex: 9 = September)
K38
YM
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
2006
T
Feb
2
…
…
Mar
3
YM
K38
2016
D
Apr
4
2017
E
May
5
2018
F
Jun
6
Jul
7
2019
G
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
2023
K
Dec
D
April 2016
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
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BSS138DWQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 8)
Gate-Source Voltage
Drain Current (Note 6)
Symbol
V
DSS
V
DGR
V
GSS
I
D
BSS138DW
50
50
20
200
Units
V
V
V
mA
Continuous
Continuous
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
t
D(ON)
t
D(OFF)
Min
50
0.5
100
Typ
75
1.2
1.4
Max
0.5
100
1.5
3.5
50
25
8.0
20
20
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
6.
7.
8.
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50Ω
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown at http://www.diodes.com/package-outlines.html.
Short duration pulse test used to minimize self-heating effect.
R
GS
20KΩ.
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
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April 2016
© Diodes Incorporated
BSS138DWQ
0.6
T
j
= 25 °C
V
GS
= 3.5V
0.8
0.7
V
DS
= 1V
-55 °C
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 3.25V
I
D
, DRAIN-SOURCE CURRENT (A)
0.5
0.6
0.5
25°C
0.4
V
GS
= 3.0V
150°C
0.3
V
GS
= 2.75V
0.4
0.3
0.2
0.1
0
0
0.2
V
GS
= 2.5V
0.1
0
7
3
4
5
6
8
9 10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
1
2
0.5 1
1.5
2
2.5
3 3.5 4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4.5
2.45
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
)
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
45
145
95
-5
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
V
GS
= 4.5V
I
D
= 0.075A
V
GS
= 10V
I
D
= 0.5A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100 125 150
-25
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
0
-55
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
8
V
GS
= 2.5V
150°C
9
V
GS
= 2.75V
7
6
5
4
3
-55°C
25°C
8
7
150°C
6
5
4
25°C
3
2
-55°C
2
1
0
0
1
0
0.2
0.25
0.1
0.15
I
D
, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
0.05
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
I
D
, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
3 of 6
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April 2016
© Diodes Incorporated
BSS138DWQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
6
V
GS
= 4.5V
3.5
V
GS
= 10V
150°C
5
150°C
3
2.5
2
25°C
4
3
25°C
1.5
1
-55°C
2
1
-55°C
0.5
0
0
0
0
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
1
100
V
GS
= 0V
f = 1MHz
I
D
, DIODE CURRENT (A)
0.1
150°C
-55°C
C, CAPACITANCE (pF)
C
iss
10
C
oss
0.01
25°C
C
rss
0.001
1
0
0.2
0.6
1
1.2
0.4
0.8
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
5
15
20
25
10
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
4 of 6
www.diodes.com
April 2016
© Diodes Incorporated
BSS138DWQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
E
E1
F
b
D
A2
c
A1
e
L
SOT363
Dim Min Max
Typ
A1
0.00 0.10
0.05
A2
0.90 1.00
1.00
b
0.10 0.30
0.25
c
0.10 0.22
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1
1.15 1.35
1.30
e
0.650 BSC
F
0.40 0.45 0.425
L
0.25 0.40
0.30
a
0°
8°
–
All Dimensions in mm
a
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
C
Dimensions
Y1
G
Y
C
G
X
Y
Y1
Value
(in mm)
0.650
1.300
0.420
0.600
2.500
X
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
5 of 6
www.diodes.com
April 2016
© Diodes Incorporated
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