®
STPR1020CB/CG/CT/CF/CFP/CR
ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
FEATURES
s
A1
K
2x5A
200 V
150°C
0.99 V
30 ns
A1
K
A2
A2
TO-220AB
STPR1020CT
s
s
s
s
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK, D
2
PAK, I
2
PAK, TO-220AB,
TO-220FPAB or ISOWATT220AB, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
K
SUITED FOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGH SURGE CURRENT CAPABILITY
INSULATED PACKAGES: ISOWATT220AB /
TO-220FPAB
Insulation Voltage = 2000V DC
Capacitance = 12 pF
b
O
so
te
le
A1
K
ro
P
A2
uc
d
K
s)
t(
K
A2
A2
K
A1
TO-220FPAB
STPR1020CFP
ISOWATT220AB
STPR1020CF
te
le
A2
A1
r
P
od
s)
t(
uc
A1
DPAK
STPR1020CB
A2
K
A1
D PAK
STPR1020CG
2
I
2
PAK
STPR1020CR
ABSOLUTE MAXIMUM
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
Parameter
Value
200
10
7
Per diode
Per device
Per device
5
10
10
50
- 65 to + 150
Unit
V
A
A
A
Repetitive peak reverse voltage
RMS forward
current
D
2
PAK / TO-220AB / ISOWATT220AB /
TO-220FPAB / I
2
PAK
DPAK
I
F(AV)
Average forward D
2
PAK / DPAK
current
TO-220AB / I
2
PAK
δ
= 0.5
ISOWATT220AB
TO-220FPAB
Tc=125°C
Tc=115°C
Tc=110°C
I
FSM
T
stg
Surge non repetitive forward current
Storage temperature range
tp=10ms sinusoidal
A
°C
1/10
August 2002- Ed: 2E
STPR1020CB/CG/CT/CF/CFP/CR
THERMAL RESISTANCES
Symbol
R
th (j-c)
Junction to case
Parameter
TO-220AB / D
2
PAK / DPAK
I
2
PAK
ISOWATT220AB
Per diode
Total
Per diode
Total
TO-220FPAB
Per diode
Total
R
th (c)
Coupling
TO-220AB / D
2
PAK / DPAK / I
2
PAK
ISOWATT220AB
TO-220FPAB
When diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Value
4.0
2.4
6.0
4.0
6.5
5
0.7
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
I
R
*
V
F **
Parameters
Reverse leakage
current
Forward voltage
drop
Test conditions
T
j
= 25°C
V
R
= V
RRM
T
j
= 100°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
I
F
= 5 A
I
F
= 10 A
I
F
= 10 A
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2 %
b
O
so
te
le
ro
P
uc
d
3.5
2.0
s)
t(
P
e
Min.
od
r
Typ.
0.8
0.95
s)
t(
uc
Max.
50
0.6
0.99
1.20
1.25
Unit
µA
mA
V
To evaluate the conduction losses use the following equation :
P = 0.78 x I
F(AV)
+ 0.042 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
tfr
T
j
= 25°C
T
j
= 25°C
Test conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
FR
= 1.1 x V
F
max
I
F
= 1A
Min.
Typ.
Irr = 0.25A
Max.
30
Unit
ns
ns
V
dI
F
/dt = 50 A/µs
dI
F
/dt = 50 A/µs
20
3
V
FP
T
j
= 25°C
2/10
STPR1020CB/CG/CT/CF/CFP/CR
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
Fig. 2:
Peak current versus form factor (per diode).
PF(av)(W)
7
6
5
4
3
2
1
T
IM(A)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
δ
=1
IF(av) (A)
tp
δ
=tp/T
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
50
45
40
35
30
25
20
15
10
5
0
0.0
T
P=5W
δ
=tp/T
tp
P=7.5W
P=10W
P=2.5W
δ
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 3-1:
Average forward current versus ambient
temperature (δ
=
0.5, TO-220AB, DPAK, D
2
PAK).
Fig. 3-2:
Average forward current versus
ambient temperature
(δ =
0.5, ISOWATT220AB,
TO-220FPAB).
IF(av)(A)
6
Rth(j-a)=Rth(j-c)
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
5
4
3
2
1
0
4
3
2
1
0
Rth(j-a)=15°C/W
5
b
O
6
IF(av)(A)
so
T
te
le
ro
P
uc
d
0.7
s)
t(
0.8
0.9
1.0
et
l
tp
P
e
od
r
s)
t(
uc
ISOWATT220AB
Rth(j-a)=Rth(j-c)
TO-220FP
Rth(j-a)=15°C/W
T
δ
=tp/T
tp
Tamb(°C)
δ
=tp/T
Tamb(°C)
50
75
100
125
150
0
25
50
75
100
125
150
0
25
Fig. 4-1:
Non repetitive surge peak forward current
versus overload duration (TO-220AB, DPAK,
D
2
PAK).
Fig. 4-2:
Non repetitive surge peak forward current
versus overload duration (ISOWATT220AB).
IM(A)
IM(A)
70
60
50
40
60
50
40
30
20
Tc=25°C
Tc=25°C
30
20
I
M
Tc=125°C
t
I
M
10
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
10
0
1E-3
Tc=100°C
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
3/10
STPR1020CB/CG/CT/CF/CFP/CR
Fig. 4-3:
Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
Fig. 5-1:
Relative variation of thermal impedance
junction to case versus pulse duration
(D
2
PAK, DPAK, TO-220AB).
IM(A)
50
40
30
20
10
I
M
t
K=[Zth(j-c)/Rth(j-c)]
1.0
δ
= 0.5
δ
= 0.2
Tc=25°C
δ
= 0.1
Tc=100°C
δ
=0.5
Single pulse
t(s)
1E-2
1E-1
1E+0
0.1
1E-3
1E-2
t(s)
0
1E-3
Fig. 5-2:
Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Fig. 6:
Forward voltage drop versus forward
current (maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
δ
= 0.5
b
O
50.0
10.0
1.0
so
IFM(A)
te
le
r
P
d
o
1E-1
uc
δ
=tp/T
s)
t(
T
tp
1E+0
P
e
od
r
s)
t(
uc
Tj=125°C
Tj=25°C
δ
= 0.2
δ
= 0.1
Single pulse
T
t(s)
0.1
1E-2
δ
=tp/T
tp
VFM(V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1E-1
1E+0
1E+1
0.1
0.0
0.2
0.4
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
Fig. 8:
Reverse recovery charges versus dIF/dt
(per diode).
Qrr(nC)
50
40
30
20
200
100
F=1MHz
Tj=25°C
IF=IF(av)
90% confidence
Tj=125°C
50
20
VR(V)
10
1
10
100
200
10
10
20
dIF/dt(A/µs)
50
100
200
500
4/10
STPR1020CB/CG/CT/CF/CFP/CR
Fig. 9:
Peak reverse recovery current versus
dIF/dt (per diode).
Fig. 10:
Dynamic parameters versus junction
temperature (per diode).
IRM(A)
20.0
10.0
IF=IF(av)
90% confidence
Tj=125°C
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
1.25
1.00
0.75
0.50
dIF/dt(A/µs)
IRM
1.0
Qrr
Tj(°C)
200
500
0.1
10
20
50
100
0.25
0
25
50
75
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
90
80
70
60
50
40
30
20
10
0
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DPAK
D²PAK
b
O
so
te
le
r
P
d
o
100
uc
s)
t(
125
150
P
e
od
r
s)
t(
uc
S(Cu) (cm²)
20
0
5
10
15
25
30
35
40
5/10
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