160 A, 100 V, SILICON, RECTIFIER DIODE, DO-9
| Parameter Name | Attribute value |
| Maker | New Jersey Semiconductor |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| application | GENERAL PURPOSE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.3 V |
| Maximum non-repetitive peak forward current | 5000 A |
| Number of components | 1 |
| Phase | 1 |
| Maximum operating temperature | 190 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 275 A |
| Maximum repetitive peak reverse voltage | 100 V |
| Maximum reverse current | 75 µA |
| Base Number Matches | 1 |
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