TiEU
^£,mL-C-.ona.uatoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne..
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
INVERTER THYRISTOR
C458
53nm / 1400V / 2000Arrns / 35us
Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is
manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate
structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially
available heat dissipators and mechanical clamping hardware.
ON-STATE CHARACTERISTICS
MODEL
V
DRM '
/ V
RRM
Oto+125°C
Y
@
-40°C
volts
C458PD
C458PB
C458P
1400
1200
1000
1300
1100
900
Gate Drive Requirements:
20 V / 20 ohms / O.Sus risetime
5 - 10 us minimum duration
External Clamping Force
5000 - 6000 Ibs.
24.5 - 26.7 kN
GMMM1 <A>
MECHANICAL OUTLINE
THERMAL IMPEDANCE
20°
±5°
B 0 •
= 2.96 in (75.2 iraj
= 1.90 in (48.3 ion)
1.0T7 in (27.2 ran)
Cs
[lziiE.ii ^£mL~(Lona.uctoi tJ^toaucti, tine.
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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20
STERN
AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
C458
LIMITING CHARACTERISTICS
PARAMETER
TEST
CONDITIONS
LIMIT
UNITS
Repetitive peak off-
state & reverse
voltage
Off-state & re verse
current
VDRM^RR
T, = -40
to+125"C
up to
1400V
volts
I
DRM
/I
RRM
T = 125"C
65
ma
Peak half cycle
non-repetitive
surge current
Forfusing
On-state voltage
I
TSM
60Hz (8,3ms)
50Hz(10ms)
16
14.6
kA
I
2
t
V^
8.3ms
I
T
= 4000A
t
p
= 8.3ms
T = 25°C
1.06
2.6
MA
2
s
volts
Critical rate of
rise of on-state
current
di/dt
60Hz
Tj=125"C
400
A/us
Critical rate of
rise of off-state
voltage
Reverse recovery
charge
dv/dt
500
v/us
T. = 125"C
.T^ 125°C
V
R
>-50V
@ 100 A/us
200V/US to 80% V
D
Vr= -50 V
400
uC
QRR
Circuit commutated
turn-off time
t
Q
35
us
MUK
mm
won* i,»>
Quality Semi-Conductors
Embedded System
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