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D40P

Description
Silicon Power Tab Transistor
CategoryDiscrete semiconductor    The transistor   
File Size330KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

D40P Overview

Silicon Power Tab Transistor

D40P Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10000
Number of components1
Polarity/channel typeNPN
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
<^E.m.i-C.ond\j.ctoi LPioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon
Power Tab
Transistor
FEATURING:
POWER-GLAS
Passivation
High Free Air Power Dissipation
Hard Solder Mountdown
Fast Switching
Brown for Nl'N
D40P
Brown
Leads can be formed to a TO 5
Pin Configuration.
absolute maximum ratings: (25°c unless otherwise specified)
Voltages
Collector to Emitter
Emitter to Base
Collector to Base
Current
Collector (Continous)
Power Dissipation
Tab at 25°C
Tab at 70T
Free Air at
SO°C
Free Ak at
50°C
(without tab)
Thermal Resistance
Junction to Case
Junction to Ambient
(with tab)
(without tab)
Temperature
Operating
Storage
Lead Soldering, 1/16" + 1/32"
From case for 10 sec. max.
V
CEO
V
E8O
V
CBO
D40P1
120
7
200
D40P3
180
7
250
0.5
D40P5
225
7
300
Volts
Volts
Volts
l
c
Amp.
Watts
Watts
Watts
Watts
-6.25
.
PT
- 4.0 •
-1.33 •
• 1.0
R0JC
R#JA
t/W
75
100
°c/w
°ow
T
An insulating hardware kit
(mica washer, nylon shoulder
washor, and solder lug) is
available at an additional cost
upon request. Kit #13868189P11.
Dimensional
Outlines
Tj
T
stg
T
L
-55 t o + 1 5 0 -
55 to+150-
°c
electrical characteristics: <25°c unless otherwise specified)
Forward Current Transfer Ratio
( I
c
= 8 0 m A , V
C E
= 10V)
(I
c
= 2 mA, V
C E
= 10V)
Collector to Emitter Voltage
(I
c
= 1.0 mA, I
b
= 0)
D40P1
D40P3
D40P5
Collector Cutoff Current
(Rated V
CEO
)
Emitter Cutoff Current
(V
E
80=
7V
>
Mm.
40
20
VCEO
Max.
Units
120
180
225
Volts
Volts
Volts
ICBO
IEBO
10
10
MA
Volt
Volt
Collector Saturation Voltage
(l
c
= 100mA, 1
B
= 10mA)
Base Saturation Voltage
(I
c
= 100 mA,
I
B
= 10 mA)
Gain Bandwidth Product
( l
c
= 80mA, V
C E
= 10V)
Storage Time
<I
C
(ON) = 80 mA, 1
B
(ON) = 8 mA
V
CE
(SAT)
V
B E
(SAT)
<T
t
S
i
1.5
MHz
2.5
Pi
l
e
(OFF) = 8 mA)
Collector Capacitance
(V
CB
= 10V, 1
E
= 0)
C
CB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
VI Semi-Conductors encourages customers ro verify that datasheets are current before phicing orders.

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