'j.s.iis.ii <~>E.ml-(lona.uctoi
iPtooud^i,
One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
PNP POWER TRANSISTORS
COMPLEMENTARY TO THE D40D SERIES
D41D is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
D41D Series
-30 - -60 VOLTS
-1 AMP, 6.25 WATTS
CASE STYLE TO-202
Features:
DIMENSIONS ARE IN INCHES AND
(MILLIMETERS)
•
•
•
•
•
High free-air power dissipation
PNP complement to D40D NPN
Low collector saturation voltage (-0.5V typ. @ 1.0A l
c
)
Excellent linearity
Fast Switching
095-0106
413-2
H67)
TYPE
T0202
TERM 1
EMIITES
TERM 2
BASE
TERM 3
COLLECTOR
TAB
COLLECTOR
maximum ratings (T
A
=
25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
PeakO)
Base Current — Continuous
Total Power Dissipation @ TA = 25° C
@ T
C
= 25C
Operating and Storage Junction
Temperature Range
SYMBOL
D41D1.2
-30
-45
-5
D41D4, 5
-45
-60
-5
D41D7, 8
-60
-75
-5
VCEO
VCES
VEBO
ic
'CM
IB
PD
Tj.Tstg
UNITS
Volts
Volts
Volts
A
A
Watts
°C
-1
-1.5
-.5
-1
-1.5
-.5
-1
-1.5
-.5
1.67
6.25
-55 to +150
1.67
6.25
-55 to +150
1.67
6.25
-5510+150
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes:
Ve"
from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%.
RftJA
75
20
R0JC
T
L
75
20
75
20
°C/W
+260
+260
+260
°c/w
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (Tc
=
25°
C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics'
1
'
Collector-Emitter Sustaining Voltage
(l
c
= 10mA)
Collector Cutoff Current
( VCE = Rated VCEO)
T
c
= 25° C
(VCE = Rated VCES)
T
C
= 1 50° c
Emitter Cutoff Current
D41D1.2
D41D4, 5
D41D7, 8
VCEO(SUS)
-30
-45
-60
—
—
-0.1
Volts
ICES
—
—
-1
—
M
(VEB = sv)
'EBO
-0.1
M
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE
7
on characteristics
DC Current Gain
(l
c
= 1 00mA, VCE = 2V)
(IC = 1A, VCE = 2V)
Collector-Emitter Saturation Voltage
(1C = -500mA, I
B
= -50mA)
Base-Emitter Saturation Voltage
(l
c
= -500mA, IB = -50mA)
D41 D1 . 4, 7
D41 D2, 5, 8
D41 D1.4.7
D41D2
D41D5, 8
D41 D1 , 2, 4, 5
D41D7, 8
hFE
hFE
50
120
10
20
10
—
—
150
360
—
—
—
VcE(sat)
v
BE(sat)
—
—
0.5
1.0
1.5
Volts
Volts
dynamic characteristics
Collector Capacitance
(V
C
B = 10V, f = 1Mnz)
Current-Gain — Bandwidth Product
(l
c
= -20mA, VCE = -10V)
CCBO
—
—
10
150
—
—
PF
MHz
fr
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
1C = -1A. I
B
1
Vcc = -30V, t_ - 2
ip ^
= -0.1A
td + V
—
—
—
50
75
40
—
—
—
nS
t
s
tf
(1) Pulse Test PW = 300ms Duty Cycle < 2%.
Tj- 1 ' C
«
-
=5
ysff"
•vnrc
--f
MO
1
M
>t.»
-^J
— I '—
—
-
'r-
•«
*^*
•^.
j - I»'C
m
M
•
M O ^.
^ I
•-
r
„
_—
•
•
-
j.-t»-e
^
•\^
—-^
^\
- «
^ ,
°"^^_
too
•1 '" ~™
t
-».
-»
«^^
^
^*^
^>^^
^
\
\
H
*^ N
J
L
\
^
-Xf
-'
-"
-••
s
\
V>,
-•'
N
H
-K>
-»«
S
ic-auicnn.cuM.T-..
I
c
-cou«t» ««««-..
FIG. 1
TYPICAL hpE VS.
FIG. 2
Renesas Electronics MCUs
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