,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
D41K Series
-30 - (-50) VOLTS
-2 AMP, 10 WATTS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX:
(973) 376-8960
VERY HIGH GAIN
PNP POWER DARLINGTON
TRANSISTORS
COMPLEMENTARY TO THE D40K SERIES
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
036M<1Q
Applications:
•
•
•
•
•
•
•
•
•
Driver
Regulator
Touch Switch
l.C. Driver
Capacitor Multiplier
Audio Output
Relay Substitute
Oscillator
Servo-Amplifier
TVPt
TO-202
TERM 1
EMITTER
TERM 2
BASE
TES*. 3
COUECTOR
TAB
COILECTOP
maximum ratings O~A = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak*
1
'
Base Current — Continuous
Total Power Dissipation @ T
A
= 25° C
@T
C
= 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VEBO
D41K1.3
-30
-13
-30
-2
-3
.2
-1.67
-10
-55to+150
D41K2.4
-50
-13
-50
-2
-3
.2
-1.67
-10
-55 to +150
'CM
»c
IB
F'D
T
J.
UNITS
Volts
Volts
Volts
A
A
A
Watts
°C
TSTG
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Vfc" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 300ms. Duty Cycle < 2%.
RWA
RflJC
75
12.5
260
75
12.5
260
°C/W
°c/w
°c
TL
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics
(Tc =
25° C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics*
1
'
Collector-Emitter Voltage
l
c
=10mA)
Collector Cut-off Current
(V
CE
= Rated VCES)
Emitter Cutoff Current
(V
EB
= -13V)
D41K1.3
D41K2.4
VCEO
ICES
IEBO
-30
-50
—
—
—
—
-.5
Volts
—
—
MA
/«A
-0.1
on characteristics
DC Current Gain
(ic = -200mA, V
CE
= -5V)
(I
C
= -1 .5A, V
CE
= -5V)
(|
C
= -1A, VCE = -5V)
Collector-Emitter Saturation Voltage
(I
C
= -1.5A, IB = -3mA)
(l
c
= -1 -OA, 1
B
= -2mA)
Base-Emitter Saturation Voltage
(I
C
= -1 .5A, IB = -3mA)
(lc = -1A,lB = -2mA)
hFE
D41 K1 ,2
D41K3.4
hFE
10K
1K
1K
—
—
—
—
—
1.5
1.5
2.5
2.5
—
—
D41K1.2
VcE(sat)
D41 K3,4
—
Volts
V
Volts
D41 K1 ,2
D41K3.4
VBE(sat)
—
—
dynamic characteristics
Collector Capacitance
(V
C
E = -10V, f=1MHz)
Current-Gain — Bandwidth Product
(lc = -20mA, VCE = -5V)
(1) Pulse Test: PW < 300ms Duty Cycle < 2%.
CCBO
—
—
9
100
15
—
pF
MHz
h
Q4IK
It COLLCCTOH CUftftCNT
IAMC3I
FIG. 2 TYPICAL CcBO vs. VOLTAGE
FIG. 1 TYPICAL hFE vs. I
C
-• -O
-10
-40
-<0
Ve, COLLCCTON-I«»C VOLTAflC - VOLTS
MCU
京公网安备 11010802033920号
EEWORLD
