^>E.mi-C.ond\jLc.toi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN POWER TRANSISTORS
.COMPLEMENTARY TO THE D43C SERIES
D42C Series
30-80 VOLTS
3 AMP, 12.5 WATTS
CASE STYLE TO-202
Features:
• High free-air power dissipation
• NPN complement to D43C PNP
• Low collector saturation voltage (0.5V typ. @ 3.0A l
c
)
• Excellent linearity
• Fast Switching
DIMENSIONS
ARE IN INCHES AND (MIUIMETf RS)
TYPE
TO-JM
TERM. 1
EMITTER
TERM. 2
COLLECTOR
TEBM.
3
BASE
TAB
COLLECT:;
maximum ratings (T
A
= 25°C) (unless otherwise specified)
RATING
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peakd)
Bass Current — Continuous
Total Power Dissipation @ TA = 25° C
@T
C
= 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCES
VEBO
"c
ICM
IB
PD
T
J,
T
stg
04201,2, 3
30
40
5
3
5
2
2.1
12.5
-SSto+150
D42C4, 5, 6
45
55
5
3
5
2
2.1
12.5
-55 to +150
D42C7, 8, 9
60
70
5
3.
5
2
2.1
12.5
-55 to +150
D42C10, 11, 12
80
90
5
3
5
2
2.1
12.5
-55 to +150
UNITS
Volts
Volts
Volts
A
A
Watts
°C
thermal characteristics'
Thermal Resistance, Junction to Ambient
RfiJA
Thermal Resistance, Junction to Case
R«JC
Maximum Lead Temperature for Soldering
TL
Purposes: V4" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%.
60
10
+260
60
10
60
10
60
10
°c/w
•CAW
+260
+260
+260
«c
NJ Semi-Concluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (T
c
= 25° C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
TYP
MAX
UNIT
off characteristics*
11
Collector-Emitter Sustaining Voltage
(IC= 100mA)
'
D42C1.2, 3
D42C4, 5, 6
D42C7, 8, 9
D42C10, 11,12
VCEO(SUS)
30
45
60
80
—
—
Volts
—
—
Collector Cutoff Current
(V
C
E = Rated VCES)
Emitter Cutoff Current
(VEB = 5V) ,
ICES
IEBO
—
—
10
100
gA
M
second breakdown
| Second Breakdown with Base Forward Biased
FBSOA
SEEFIGURES3&4
on characteristics'
11
DC Current Gain
(Ic = 200mA, VCE = 1V)
(lc = 1A, VCE= 1V).
<IC = 2A,V
C
E=1V)
Collector-Emitter Saturation Voltage
(IC = 1 A, I
B
= 50mA)
Oc = 1A, IB = 100mA)
Base-Emitter Saturation Voltage
(I
C
= 1A, IB = 100mA)
D42O1 ,4,7,10
D42C2, 5, 8, 1 1
D42C3, 6, 9, 12
D42C1.4, 7. 10
gggJtU
D42C2, 5, 8, 1 1
D42C3, 6, 9, 12
D42C1.4, 7, 10
hFE
hFE
25
100
40
10
20
20
—
—
—
220
120
—
~
v
CE(sat)
—
—
VcE(sat)
VBE(sat)
—
0.5
0.5
0.5
1.3
Volts
Volts
Volts
dynamic characteristics
Collector Capacitance
(V
CB
= 10V.f = 1M
Hz
)
Current-Gain — Bandwidth Product
(I C = 20mA, VCE = 4V)
CCBO
—
—
—
50
100
—
PF
MHz
tr
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
I
C
= 1A, I
B1
= I
B2
= 0.1A.
td
+
<r
—
—
—
100
500
75
—
—
—
nS
VCG =
3
°V. t
p
= 25 psec
ts
tf
(1) Pulse Test PW * 300ms Duty Cycle < 2%.
stm32/stm8
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