^Produeti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
D43C
Series
-30--80 VOLTS
-3 AMP, 12.5 WATTS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP POWER TRANSISTORS
COMPLEMENTARY TO THE D42C SERIES
Features:
• High free-air power dissipation
•
•
•
•
PNP complement to D42C NPN
Low collector saturation voltage (0.5V typ. @ 3.0A l
c
)
Excellent linearity
Fast Switching
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
|9 144-10 4 ' 4 i
3405-0425
0025
(OMOi
H
O.OM-llOt
!2.413-2«e*>
TERM 2
COLLECTOR
TE1M
.
TAB
COLLECTOR
TYPE
10-MJ
TERM 1
EMITTER
3
BASE
maximum ratings (T
A
=
25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peakd)
Base Current — Continuous
Total Power Dissipation @ TA = 25° C
@ T
c
= 25°C
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCES
VEBO
IG
'CM
IB
PD
Tj.Tstg
D43C1, 2, 3
-30
-40
-5
-3
-5
-2
2.1
12.5
-55 to +150
D43C4, 5, 6
-45
-55
-5
-3
-5
-2
2.1
12.5
-55 to +150
D43C7, 8, 9
-60
-70
-5
-3
-5
-2
2.1
12.5
-55 to +150
D43C10, 11, 12 UNITS
-80
Volts
-90
Volts
-5
Volts
-3
A
-5
A
-2
2.1
Watts
12.5
-55 to +150
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes:
%"
from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%.
RWA
RWC
T
L
60
10
60
10
60
10
60
10
°C/W
°C/W
°C
+260
+260
+260
+260
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (T
C
=
25° C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
|
off characteristics^
Collector-Emitter Sustaining Voltage
(IC = 100mA)
Collector Cutoff Current
(VCE = Rated VCES)
Emitter Cutoff Current
(V
E
B = 5V)
D43C1.2, 3
D43C4, 5, 6
D43C7, 8, 9
D43C10, 11, 12
VCEO(SUS)
-30
-45
-60
-80
—
—
—
—
—
—
—
—
-10
Volts
ICES
IEBO
—
—
A/A
MA
-100
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 3
on characteristics
DC Current Gain
(I
C
= -200mA, VCP = -1V)
(IC = -1A,V
C
E = -1V)
(I
C
= -2A, VCE = -1V)
Collector-Emitter Saturation Voltage
Oc
=
-1A, IB = -50mA)
Oc = -1A, IB = -100mA)
Base-Emitter Saturation Voltage
(lc = -
1
A, IB = -100mA)
• D43C1, 4, 7, 10
D43C2, 5, 8, 1 1
D43C3.6, 9, 12
D43C1.4, 7, 10
D43C2, 5, 8, 11
D43C3. 6, 9, 12
D43C2. 5, 8, 11
D43C3, 6, 9, 12
D43C1.4, 7. 10
hFE
hFE
25
40
40
10
20
20
—
120
120
—
—
"
VcE(sat)
VcE(sat)
VBE(sat)
—
—
—
-0.5
-05
-05
-1.3
Volts
Volts
Volts
dynamic characteristics
Collector Capacitance
(V
C
B = -10V,f = 1M
H
z)
Current-Gain — Bandwidth Product
(IC = -20mA, VCE = -4V)
CCBO
fj
—
—
—
40
125
—
PF
MHz
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
IG = -1A, I
B
1 = lea = -0-1A
Vnr- " 3QV t_ =
9Z, ,i<iof
td
+
t
r
ts
—
—
—
50
500
50
—
—
—
nS
tf
(1) Pulse Test PW
-
300ms Duty Cycle < 2%.
MCU
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