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D44C3

Description
4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size641KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

D44C3 Overview

4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB

D44C3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNew Jersey Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)6 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
DESCRIPTION
•With TO-220 package
•Complement to type D45C Series
•Very low collector saturation voltage
•Fast switching
APPLICATIONS
•Designed for various specific and
general purpose application
•Shunt and switching regulators
•Low and high frequency inverters
converters and etc.
PINNING
PIN
1
2
3
D44C Series
,,
1 2 3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220C) .nul symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
D44C1,2,3
D44C4,5,6
VCBO
Collector-base voltage
D44C7,8,9
D44C10,11,12
D44C1,2,3
D44C4,5,6
VCEO
Collector-emitter voltage
D44C7,8,9
D44C10,11,12
VEBO
Ic
ICM
IB
PD
T,
'stg
CONDITIONS
VALUE
40
55
UNIT
Open emitter
70
90
30
45
V
Open base
60
80
V
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Open collector
5
4
6
1
V
A
A
A
W
T
c
=25
30
150
-55-150
Qualiry Semi-Conductors

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