SD5000IP datasheet, PDF - EEWORLD Datasheet

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SD5000IP: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size66KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SD5000IP Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD5000IP Parametric

Parameter Name	Attribute value
Maker	Vishay
package instruction	IN-LINE, R-PDIP-T16
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
JESD-30 code	R-PDIP-T16
Number of components	4
Number of terminals	16
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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package instruction	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	10 V	10 V	10 V	20 V	20 V	20 V
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF
JESD-30 code	R-PDIP-T16	R-PDIP-T16	R-PDIP-T16	R-PDIP-T16	R-PDIP-T16	R-PDIP-T16	R-PDIP-T16
Number of components	4	4	4	4	4	4	4
Number of terminals	16	16	16	16	16	16	16
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Vishay	-	-	-	Vishay	Vishay	Vishay
Base Number Matches	-	1	1	1	1	-	-

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