SFT8600/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT8600 __ __
│ └
Screening
2/
__
= Not Screened
│
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└
Package
/5 = TO-5
1 AMP
1000 Volts
NPN Transistor
FEATURES:
BVCEO to 400 volts
Very Low Saturation Voltage
Very Low Leakage
High Gain from 20 mA to 250 mA
200°C Operating, Gold Eutectic Die Attach
Superior Performance over JEDEC 2N5010-15
Series
High Speed Switching tf = 0.4µS TYP
Symbol
Value
Units
Maximum Ratings
Collector – Emitter Voltage
(RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 100º C
Derate above 25º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
B
P
D
Tj, Tstg
R
θJC
400
1000
1000
6
1
100
3.3
33
-65 to +200
30
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
TO-5 (/5)
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT8600/5
Symbol
BV
CEO
BV
CER
BV
CBO
BV
EBO
I
CBO
I
CEO
I
EBO
Min
400
1000
1000
6
––
––
––
10
30
40
20
15
––
––
––
––
8.0
––
---
---
Max
––
––
––
10
500
10
1
Units
V
V
V
µAdc
µAdc
µAdc
Electrical Characteristic
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20µAdc, RBE = 1KΩ)
Collector–Base Breakdown Voltage
(IC= 20µAdc)
Emitter–Base Breakdown Voltage
(IE= 20µAdc)
Collector Cutoff Current
(VCB= 800V)
(VCB= 800V @ TC= 150°C)
Collector Cutoff Current
(VCE= 400 Vdc)
Emitter Cutoff Current
(VEB= 4V)
DC Current Gain*
(IC= 100mAdc, VCE= 5Vdc, TC= -55°)
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
Collector – Emitter Saturation Voltage*
(IC= 20mAdc, IB= 2mAdc)
(IC= 100mAdc, IB=10mAdc)
Base – Emitter Saturation Voltage *
(IC= 20mAdc, IB= 2mAdc)
(IC=100mAdc, IB=10mAdc)
Current Gain Bandwidth Product
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
Output Capacitance
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
h
FE
200
––
V
CE(Sat)
0.3
0.5
0.8
1.0
––
15
50
150
3
800
Vdc
V
BE(Sat)
f
T
Vdc
MHz
pF
nsec
nsec
µsec
nsec
Cob
td
tr
ts
tf
* Pulse Test: Pulse Width = 300
µ
S, Duty Cycle = 2%
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT8600/5
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1: Emitter
Pin 2: Base
Pin 3: Collector
Case: Collector
FIGURE 2
SAFE OPERATING AREA
(t = 1 sec)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
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