<$Eini-C,onduct:oi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
., Line.
D45D Series
-40 - (-80) VOLTS
-6 AMP, 30 WATTS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VERY HIGH GAIN
PNP POWER DARLINGTON
TRANSISTORS
COMPLEMENTARY TO THE D44D SERIES
Applications:
• Solenoid Driver
• Lamp Driver
• Relay Substitute
• Switching Regulator
• Inverter/Converter
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.116(2.95)
CASE
TEMPERATURE
REFERENCE
POINT
02'I053I
.016(0.38)
TYPS
TO-220-A8
TERM 1
BASE
TERM 2
COUECTOB
Ti-RM 3
EMI^TEP
TAB
COLLECTOR
maximum ratings O~A = 25°C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Base Current — Continuous
Total Power Dissipation @ T
A
= 25° C
@T
C
= 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VEBO
jc
IB
PD
TJ, T
STG
D45D1.2
-40
-50
-5
6
.5
2.1
30
-55 to +150
D45D3.4
-60
-70
-5
6
.5
2.1
30
-55to+150
D45D5.6
-80
-90
-5
6
.5
2.1
30
-55 to +150
UNITS
Volts
Volts
Volts
A
A
Watts
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: V4" from Case for 5 Seconds
RAJA
R&JC
60
4.2
260
60
4.2
260
60
4.2
260
°C/W
°c/w
°c
TL
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ
Semi-Conductors
encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (Tc
=
25° C)
(unless
otherwise
specified)
CHARACTERISTIC
SYMBOL |
MIN
TYP
MAX
UNIT
off characteristics'
1
'
Collector-Emitter Breakdown Voltage
Ic = -50mA)
Collector Cut-off Current
(V
C
E = Rated VCES)
(V
C
E = Rated VCES- VBE = -0-4V)
Emitter Cutoff Current
(V
EB
= -5V)
D45D1.2
D45D3.4
D45D5.6
T
C
= 25° C
T
c
= 1 25° C
VCEO(BR)
-40
-60
-80
Volts
—
—
-10
-5
-10
ICES
ICEV
IEBO
—
-
—
MA
MA
second breakdown
| Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 5
on characteristics
DC Current Gain
(ic = -1A, v
CE
= -2V)
Collector-Emitter Saturation Voltage
(l
c
= -3A, I
B
= -3mA)
(l
c
= -5A, 1
B
= -5mA)
Base-Emitter Saturation Voltage
(I
C
= -5A, IB = -5mA)
HFE
D45D2.4.6 only
VCE (sat)
v
BE(sat)
2,000
—
—
5,000
—
-1.5
-2.0
—
V
V
—
-2.5
Volts
dynamic characteristics
Collector Capacitance
(VcE = 10V, f=1MHz)
CCBO
—
—
-75
PF
switching characteristics
Resistive Load
Delay Time + Rise Time
Storage Time
Fall Time
(1) Pulse Test: PW < 300ms Duty Cycle < 2%.
lc = -3A, IBI = lB2 = -3mA
td + t
r
ts
tf
—
—
—
0.35
0.4
0.3
—
—
—
MS
V
C
c = 40V, t
p
= 25 /xsec
IOO
JUNCTION TO AMBIENT
-100
-60
« -40
CL
f-
V
C6
•
-IOV
-/-I
1 -*°
> en
-! -10
UJ
O
O I .1 .1 .1 i I
' l
* en '_ ro A en — ro
2
JUNCTION TO CASE
/
/
Tj
= 15
«J
/
/
/
/
Tj
2VC/
[
j
/
/
t-
2
V
CE*
IOV
/
O.I
10
,-5
,-4
10
0"
10"
I
TIME - SECONDS
10
10'
10
-,
_
O
ro
J
I .
l
T
c
/
x'
/^
/
s*
/
Z
-h
f
i
TJ-
//
/
/
2.
/
/
/
/
I
c
- COLLECTOR CURRENT - MIL
s*
_*-
4
F^
y.
„-"'
P*==
i
-55-C
"0
-.I
-.2 -.3 -.4 -.5 -.6 -.7 -.8 -.9 -I.O -I.I -I.2 -I.S -I.4 -I.9 -I.6 -1.7 -1.8
V
BE
- BASE TO E M I T T E R VOLTAGE - VOLTS
FIG. 1
MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIG. 2
TYPICAL TRANSCONDUCTANCE CHARACTERISTICS
MCU
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