,
Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
D45E Series
-40 - (-80) VOLTS
-10 AMP, 50 WATTS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VERY HIGH GAIN
PNP POWER DARLINGTON
TRANSISTORS
COMPLEMENTARY TO THE D44E SERIES
Applications:
•
•
•
•
•
•
•
•
•
•
Driver
Regulator
Capacitor Multiplier
Solenoid Driver
Inverter Power Supply
Switch
Audio Output
Relay Substitute
Oscillator
Servo-Amplifier
CASE STYLE TO-220AB
DIMENSIONS
ARE
IN
INCHES AND (MILLIMETERS)
.116(2.861
*-rH.
.05611.381
*\ .048(1.33)
CASE
TEMPERATURE
REFERENCE
POINT
I
,05511.391
.045(1.14)
TYPE
TO-220-AB
J, U
I -«|
U— .10512.671
. v-l
08512.41)
v
—L
_J«
.02110.531
01510.381
TERM 3
EMITTER
.21015.331
.190(4.62)
TERM 1
BASE
TERM 2
COLLECTOR
TAB
COLLECTOR
maximum ratings (T/^= 25°C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak'
1
'
Base Current — Continuous
Total Power Dissipation @ TA = 25° C
@T
C
= 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VEBO
D45E1
-40
-40
-7
-10
-20
-1
1.67
50
-55 to +150
IG
[CM
IB
PD
T
J.
T
STG
D45E2
-60
-60
-7
-10
-20
-1
1.67
50
D45E3
-80
-80
-7
-10
-20
-1
1.67
50
UNITS
Volts
Volts
Volts
A
A
Watts
C
C
-55 to +150
-55 to +150
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes:
%"
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 300ms. Duty Cycle < 2%.
RflJA
R0JC
75
2.5
260
75
2.5
260
75
2.5
260
°C/W
°C/W
°C
TJ.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics
(Tc =
25° C)
(unless otherwise specified)
L
CHARACTERISTIC
SYMBOL
WIN
TYP
MAX
UNIT
off characteristics'
11
Collector-Emitter Voltage
(l
c
= -100mA)
Collector Cut-off Current
(V
CE
= Rated V
CES
)
Emitter Cutoff Current
(V
EB
= -7V)
D45E1
D45E2
D45E3
VCEO
-40
-60
-80
—
—
Volts
—
—
ICES
•EBO
—
—
-10
,A
-1.0
M
second breakdown
| Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 6
on characteristics
DC Current Gain
dc = -5A, VCE = -sv)
Collector-Emitter Saturation Voltage
(lc = -5.0A, IB = -10mA)
(IC = -10.0A, IB = -20mA)
Base-Emitter Saturation Voltage
(lc = -5.0A, IB = -10mA)
hFE
1,000
—
—
—
—
—
—
—
VcE(sat)
v
BE(sat)
-1.5
-2.0
-2.5
V
V
Volts
dynamic characteristics
Collector Capacitance
(VCE = -10V, f = 1MHz)
CCBO
—
—
220
PF
switching characteristics
Resistive Load
Delay Time + Rise Time
Storage Time
Fall Time
(1) Pulse Test: PW < 300ms Duty Cycle < 2%.
I
C
= -10A, IBI = lB2 = -20mA
VGC
=
-^V.
l
p = 25jusec
td
+
t
r
ts
tf
—
—
—
0.6
2.0
0.5
—
—
—
MS
2
5
10
20
I
C
-COLLECTOR CURRENT-AMPERES
FIG. 1 TYPICAL SATURATION VOLTAGE CHARACTERISTICS
MCU
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